Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

Rozen, John; Ahyi, A. C.; Zhu, Xingguang; Williams, John R.; Feldman, L. C.

doi:10.1109/ted.2011.2164800

Cited by 123 publications

(107 citation statements)

References 15 publications

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“…As expected, the density of interface traps is higher at conduction band edge than that at mid-gap of 4H-SiC. In general, it is higher at both ends of the conduction and valence bands than that at mid-gap of semiconductor [49,50]. The density of interface traps at band edge of our samples is higher than the reported value of 10 13 -10 12 cm −2 eV −1 [51].…”

Section: Resultssupporting

confidence: 68%

Growth and surface analysis of SiO2 on 4H-SiC for MOS devices

Kodigala

Chattopadhyay

Overton

et al. 2015

Applied Surface Science

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Section: Resultssupporting

confidence: 68%

Growth and surface analysis of SiO2 on 4H-SiC for MOS devices

Kodigala

Chattopadhyay

Overton

et al. 2015

Applied Surface Science

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“…However, one issue of SiC devices is the difficulty of obtaining the expected low on-resistance characteristics because of the low electron mobility of the MOS interface due to its high interface trap density (D it ) [3]. Recently, the nitric oxide post-oxidation annealing (NO-POA) process has been widely recognized as a very effective approach to reduce D it and improve on-resistance [4][5][6][7][8]. This process increases the MOS interface electron mobility by segregating nitrogen on the MOS interface and reducing the D it near the conduction band, which is known to depress mobility.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Nitrogen State on MOS Interface of 4H-SiC m-Face after Nitric Oxide Post Oxidation Annealing (NO-POA)

Hamada

Mikami

Naruoka

et al. 2017

e-J. Surf. Sci. Nanotech.

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It is known that the interface nitrogen density of the 4H-SiC Si-face, C-face, and a-face increases as a result of the NO-POA process, that the electron mobility increases as the nitrogen density increases, and that each face has a different interface nitrogen saturation density. In contrast, the anisotropy of the nitridation characteristics of the m-face, which is regarded as a promising channel for high-performance trench MOSFETs, is not well known. To identify the nitridation status of the m-face after NO-POA, the MOS interface structures with a SiO2 formed on m-face by CVD and treated by NO-POA was investigated by SIMS, HAXPES, XPS, and XAFS. In the same way as the other faces, it was found that the nitrogen segregates on the SiO2/SiC MOS interface, that most of the nitrogen combines with Si, and that the interface nitrogen density has a unique saturation value. The nitrogen density saturation value on the m-face measured by SIMS was 9.8 × 10 14 cm −2 . This value is approximately 1.5 times the exposed carbon density on the top surface of the m-face.

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“…7,8 Such defects lead to poor channel mobilities in SiC-based metal-oxide-semiconductor field effect transistors (MOSFETs). 9,10 The origin of these defects can be related to the formation, during thermal oxidation, of a non-abrupt SiO 2 /SiC interfacial region, observed by Nuclear Reaction Profiling (NRP), Transmission Electron Microscopy (TEM), and X-ray Reflectivity (XRR), 6,11,12 where silicon oxycarbide (SiC x O y ) compounds are found. 13,14 In order to improve the quality of the SiO 2 /SiC interface, different post-oxidation treatments have been employed, 3,15,16 as well as alternative routes to form SiO 2 films on SiC, aiming at minimizing the electrical degradation from thermal oxidation.…”

mentioning

confidence: 99%

SiO2/SiC structures annealed in D218O: Compositional and electrical effects

Pitthan

Corrêa

Soares

et al. 2014

Applied Physics Letters

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Effects of water vapor annealing on SiO2/4H-SiC structures formed following different routes were investigated using water isotopically enriched in 18O and 2H (D). Isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on 4H-SiC was observed in the whole depth of the films, differently from the behavior of SiO2 films thermally grown on 4H-SiC. The highest amount of D was obtained in the sample with the highest negative fixed charge concentration, suggesting that the D incorporation occurs in defects in the structure that exist prior to the annealing. As a consequence of the water annealing, a significant reduction in the negative effective charge in metal-oxide-semiconductor capacitors and the removal of the SiO2/SiC interfacial region was observed, attributed to the reduction of the amount of SiOxCy compounds in the interfacial region.

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Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

Cited by 123 publications

References 15 publications

Growth and surface analysis of SiO2 on 4H-SiC for MOS devices

Growth and surface analysis of SiO2 on 4H-SiC for MOS devices

Analysis of Nitrogen State on MOS Interface of 4H-SiC m-Face after Nitric Oxide Post Oxidation Annealing (NO-POA)

SiO2/SiC structures annealed in D218O: Compositional and electrical effects

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