Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT's

Richey, D.M.; Cressler, John D.; Joseph, A.J.

doi:10.1109/16.556153

Cited by 59 publications

(43 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Our results show that SiGe HBTs with trapezoid Ge profiles have higher cutoff frequencies and higher maximum frequencies of oscillation, but lower current gain compared to SiGe HBT with flat Ge profiles ,which is consistent with previous research [20,21], which used trapezoid Ge profil for optimum SiGe HBT performance. The simulation results show that base width scaling, Ge profiles and Ge mole fraction have no significant effect to the ECL gate delay.…”

Section: Vertical Scalingsupporting

confidence: 81%

Silicon Germanium Heterojunction Bipolar Transistor for Digital Application

Julian

2012

TELKOMNIKA

View full text Add to dashboard Cite

show abstract

Section: Vertical Scalingsupporting

confidence: 81%

Silicon Germanium Heterojunction Bipolar Transistor for Digital Application

Julian

2012

TELKOMNIKA

View full text Add to dashboard Cite

show abstract

“…SCORPIO has full heterojunction simulation capability, advanced parameter models for mobility, transit time, and bandgap narrowing, and provides both bias-and position-dependent output. It has been shown to have excellent agreement with measured data for advanced SiGe HBT's grown using the ultrahigh vacuum/chemical vapor deposition (UHV/CVD) technique from 300 K down to liquid-nitrogen temperature (77 K) [6]- [8].…”

Section: The Scorpio Simulatormentioning

confidence: 63%

“…4, that the presence of Ge greatly enhances . Both theory and experimental results show that this is primarily controlled by the exponential dependence of on the Geinduced bandgap narrowing at the base-side edge of the emitter-base (EB) depletion region [ ] [6], [14]. Notice also, that the graded Ge profiles show a slight decrease in with increasing collector current density.…”

Section: The Scorpio Simulatormentioning

confidence: 99%

Base-profile optimization for minimum noise figure in advanced UHV/CVD SiGe HBT's

Ansley

Cressler

Richey³

1998

IEEE Trans. Microwave Theory Techn.

Self Cite

View full text Add to dashboard Cite

We investigate the base-profile design issues associated with optimizing ultrahigh vacuum/chemical vapor deposition (UHV/CVD) silicon-germanium (SiGe) heterojuction bipolar transistors (HBT's) for minimum broad-band noise. Using the simulator for cryogenic research and SiGe bipolar device optimization (SCORPIO), the impact of Ge profile, base doping level, and base thickness on minimum noise figure (NFmin) are quantitatively examined across the 055 C-125 C temperature range.We introduce a novel Ge profile for optimum NFmin, which allows independent control of current gain () and achieves maximum fT while maintaining thermodynamic stability. Simulations show that this profile can achieve a of 200, a peak fT > 50 GHz, a peak fmax > 60 GHz, and an NFmin < 0.5 dB at 2 GHz and <1 dB at 10 GHz using a conservative base width of 90 nm.We predict that a 45-nm base-width/0.5-m emitter-width device with a thermodynamically stable flat Ge profile, manufacturable using an UHV/CVD growth technique, should be able to achieve an NF min < 0.4 dB at 2 GHz and 0.8 dB at 10 GHz along with a of 300, a peak f T > 70 GHz, and a peak f max > 90 GHz.These 300-K performance values improve as the temperature is reduced.

show abstract

“…The collector currents of SiGe transistor are enhanced by a factor of |30 over that of the Si transistor. This compares with a calculated factor of 34 obtained from the measured SIMS profiles using the bandgap data of People [3], the density of states data of Poortmans et al [4] and the minority carrier mobility data of Richey et al [5]. Fig.…”

Section: Bementioning

confidence: 99%

SiGe HBTs on bonded wafer substrates

Hall¹,

Lamb²,

Bain³

et al. 2001

Microelectronic Engineering

View full text Add to dashboard Cite

Silicon germanium (SiGe) heterojunction transistors have been fabricated on bonded wafer, silicon-on-insulator (SOI) substrates. The devices have application in low power, radio-frequency electronics. The bonded wafer substrates incorporate poly-Si filled, deep trenches for isolation. A novel selective and non-selective low pressure chemical vapour deposition (LPCVD) growth process was used for the epitaxial layers. Experimental transistors exhibit good uniformity across the wafers and collector currents are seen to be ideal, showing the expected enhancement for the SiGe devices compared to Si. Anomalies in device characteristics at high current levels are investigated.

show abstract

Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT's

Cited by 59 publications

References 27 publications

Silicon Germanium Heterojunction Bipolar Transistor for Digital Application

Silicon Germanium Heterojunction Bipolar Transistor for Digital Application

Base-profile optimization for minimum noise figure in advanced UHV/CVD SiGe HBT's

SiGe HBTs on bonded wafer substrates

Contact Info

Product

Resources

About