2015
DOI: 10.1088/0953-8984/27/48/485307
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Scaling like behaviour of resistivity observed in LaNiO3thin films grown on SrTiO3substrate by pulsed laser deposition

Abstract: Abstract. We discuss the origin of the temperature dependence of resistivity ρ observed in highly oriented LaN iO 3 thin films grown on SrT iO 3 substrate by a pulsed laser deposition technique. All the experimental data are found to collapse into a single universal curve3/2 for the entire temperature interval (20K < T < 300K) with T sf (d) being the onset temperature for triggering a resonant scattering of conduction electrons by spin fluctuations in LaN iO 3 /SrT iO 3 heterostructure.

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Cited by 8 publications
(11 citation statements)
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“…Fig.3(d) exhibits values of resistivity taken at 300 K compared to the thicknesses of thin films deposited on different substrates. The observed behavior for different types of substrates (an increase of the values of resistivity with decreasing the thickness of thin films) is quite similar to previously reported results [8][9][10]. However, the LNO/STO heterostructure with thickness of 35 nm exhibits unusually small values of resistivity in comparison with previous observations [15,21].…”
Section: Resultssupporting
confidence: 89%
“…Fig.3(d) exhibits values of resistivity taken at 300 K compared to the thicknesses of thin films deposited on different substrates. The observed behavior for different types of substrates (an increase of the values of resistivity with decreasing the thickness of thin films) is quite similar to previously reported results [8][9][10]. However, the LNO/STO heterostructure with thickness of 35 nm exhibits unusually small values of resistivity in comparison with previous observations [15,21].…”
Section: Resultssupporting
confidence: 89%
“…Fig. 3 shows the typical results for the temperature dependence of the resistivity ρ ( ) ) exhibits a universal T 3/2 behavior of resistivity over the entire measured temperature range and is well fitted by the following expression [16,18]:…”
Section: Resultsmentioning
confidence: 74%
“…To test the dependence of transport properties on the granularity of the sample, two different thin films (with the same thickness = d 33 nm) have been prepared. The films thickness was confirmed by using field-emission scanning electron microscopy (FEG SEM) [13,18]. An average grain size of = R 22 nm g and = R…”
Section: Resultsmentioning
confidence: 99%
“…In all measurements, the magnetic field is applied perpendicular to the flow of current. [41,42,45]. In bulk LNO, these localized spins might be originating from Ni +2 ions created due to the Oxygen deficiency [41] whereas for superlattice structures, this spin fluctuation arises because of the formation of spin density wave in the heterostructure interfaces [42,46].…”
Section: Temperature Dependence Of Resistivitymentioning
confidence: 99%