Scaling limits of resistive memories

Abstract

This paper is intended to provide an expository, physics-based, framework for the estimation of the performance potential and physical scaling limits of resistive memory. The approach taken seeks to provide physical insights into those parameters and physical effects that define device performance and scaling properties. The mechanisms of resistive switching are based on atomic rearrangements in a material. The three model cases are: (1) formation of a continuous conductive path between two electrodes within an insulating matrix, (2) formation of a discontinuous path of conductive atoms between two electrodes within an insulating matrix and (3) rearrangement of charged defects/impurities near the interface between the semiconductor matrix and an electrode, resulting in contact resistance changes. The authors argue that these three model mechanisms or their combinations are representative of the operation of all known resistive memories. The central question addressed in this paper is: what is the smallest volume of matter needed for resistive memory? The two related tasks explored in this paper are: (i) resistance changes due to addition or removal of a few atoms and (ii) stability of a few-atom system.

Nanoscale memristive radiofrequency switches

“…The device fabrication process for our memristive RF switches is also simpler as compared with other devices. Further scaling of the device, such as shrinking the gap size, will lead to optimized switching behaviour such as longer endurance and lower power consumption 44,45 with no degradation to the RF performance, provided the ON-state resistance is dominated by the filament and not other effects. It is necessary to engineer the location and geometry of the metallic filaments for even lower ON-state resistance, to enhance the device endurance, and to reduce the energy required for each switching event.…”

Switching kinetics of electrochemical metallization memory cells

“…35,36 This leads to several theoretical models regarding not only the fundamental processes 37,38 but also device aspects e.g. scaling limitations, 39 programming kinetics 37,40,41 and multilevel switching. 9,39,42,43 In the context of commercial applications, the switching speed is crucial for device operation and the same rate limiting factors e.g.…”

“…scaling limitations, 39 programming kinetics 37,40,41 and multilevel switching. 9,39,42,43 In the context of commercial applications, the switching speed is crucial for device operation and the same rate limiting factors e.g. interfacial processes, nucleation, transport etc.…”

Resistive switching phenomena in thin films: Materials, devices, and applications

“…Recent reviews of this topic can be also found. [1][2][3][4][5] Note that material systems and physical mechanisms are not discussed in this article but will be reviewed in the articles in this issue.…”