Scaling Limits on All-Spin Logic

Chang, Sou-Chi; Kani, Nickvash; Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.; Naeemi, Azad

doi:10.1109/tmag.2016.2518702

Cited by 12 publications

(7 citation statements)

References 15 publications

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“…The magnetic wires are modeled with the material parameters of permalloy, in which material anisotropy is weak and thus the energy barrier is mainly determined by shape anisotropy. Furthermore, copper (Cu) is used as the non-magnetic material and the length is chosen as 70nm, which can be further reduced to improve the energy efficiency as long as the dipole coupling between the input and the output FM wires is weak enough [15]. Note that Cu transport parameters such as resistivity and spin relaxation length are obtained through the compact model developed in Ref.…”

Section: Resultsmentioning

confidence: 99%

“…Recently, devices in the form of NLSVs connected by FM wires based on automotion of DW has been proposed due to full metallic structures and the possibility of energyfree propagation of DW once it is created [14]. In contrast, in NLSVs, only part of injected spins contribute STT to DW creation in the interconnect, and STT becomes much weaker as the shunt path in the device is reduced [15]. As a result, a lateral simple spin-valve with a tunneling barrier is suggested to eliminate the shunt path and simultaneously maintain the non-reciprocity [16], [17].…”

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confidence: 99%

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Low-power Spin Valve Logic using Spin-transfer Torque with Automotion of Domain Walls

Chang,

Manipatruni,

Nikonov

et al. 2016

Preprint

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A novel scheme for non-volatile digital computation is proposed using spin-transfer torque (STT) and automotion of magnetic domain walls (DWs). The basic computing element is composed of a lateral spin valve (SV) with two ferromagnetic (FM) wires served as interconnects, where DW automotion is used to propagate the information from one device to another. The non-reciprocity of both device and interconnect is realized by sizing different contact areas at the input and the output as well as enhancing the local damping mechanism. The proposed logic is suitable for scaling due to a high energy barrier provided by a long FM wire. Compared to the scheme based on non-local spin valves (NLSVs) in the previous proposal, the devices can be operated at lower current density due to utilizing all injected spins for local magnetization reversals, and thus improve both energy efficiency and resistance to electromigration. This device concept is justified by simulating a buffer, an inverter, and a 3input majority gate with comprehensive numerical simulations, including spin transport through the FM/non-magnetic (NM) interfaces as well as the NM channel and stochastic magnetization dynamics inside FM wires. In addition to digital computing, the proposed framework can also be used as a transducer between DWs and spin currents for higher wiring flexibility in the interconnect network.Keywords -spin-transfer torque, domain wall, digital logic I. INTRODUCTION Spintronics, a field of switching magnetization using variety of sources [1], has recently been one of the most promising candidates in the beyond complementary metal-oxidesemiconductor (CMOS) computing [2], as power dissipation due to leakage currents in present-day integrated circuits increases with device density, doubling approximately every two years according to the Moore's law [3]. The major advantage of encoding digital information into magnetic states is their non-volatility, which eliminates the delay and energy required to save and fetch the data when a microprocessor is put in a sleep state, with power off. It thus loosens the power constraints in a microprocessor. In most of the proposed spinbased logic devices [2], the bit is represented by the magnetization of a single-domain ferromagnet, and the communication between bits is realized using either spin currents [4], [5], the dipolar coupling [6], [7], or spin wave propagation between magnetoelectric cells [8]. However, no matter how well the data is preserved while bits are transmitted, the data retention time is degraded as the device size is scaled due to the lowering

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

Low-power Spin Valve Logic using Spin-transfer Torque with Automotion of Domain Walls

Chang,

Manipatruni,

Nikonov

et al. 2016

Preprint

Self Cite

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“…It has been previously argued that in ASL circuits, nanomagnet coupling becomes an issue for only very short interconnects 47 . At channel lengths of several hundreds of nanometer considered in this work, the dipolar field generated by one nanomagnet to the center of the other would be 0.1%H k 6,48 .…”

Section: Appendix-b: Dipolar Couplingmentioning

confidence: 99%

A Probability-Density Function Approach to Capture the Stochastic Dynamics of the Nanomagnet and Impact on Circuit Performance

Kani

Rakheja

Naeemi

2016

IEEE Trans. Electron Devices

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In this paper we systematically evaluate the variation in the reversal delay of a nanomagnet driven by a longitudinal spin current while under the influence of thermal noise. We then use the results to evaluate the performance of an All-Spin-Logic (ASL) circuit. First, we review and expand on the physics of previously-published analytical models on stochastic nanomagnet switching. The limits of previously established models are defined and it is shown that these models are valid for nanomagnet reversal times < 200 ps. Second, the insight obtained from previous models allows us to represent the probability density function (PDF) of the nanomagnet switching delay using the double exponential function of the Fréchet distribution. The PDF of a single nanomagnet is extended to more complex nanomagnet circuit configurations. It is shown that the delay-variation penalty incurred by nanomagnets arranged in parallel configuration is dwarfed by the average delay increase for nanomagnets arranged in a series configuration. Finally, we demonstrate the impact of device-level performance variation on the circuit behavior using ASL logic gates. While the analysis presented in this paper uses an ASL-AND gate as the prototype switching circuit in the spin domain, the physical concepts are generic and can be extended to any complex spin-based circuit.arXiv:1607.06046v1 [cond-mat.mes-hall]

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“…But, fortunately, ASLD does not need extra hardware for implementing spin-charge conversion repeatedly, because spin is used at every stage of information processing, transfer, and storage [8]. Thus, ASLD is relatively simpler than other spintronic devices in structure and has been widely studied in the aspects of device switching mechanism [9][10][11], material and structural optimization [12][13][14][15][16][17][18][19][20][21][22][23], and circuit design [24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Proposal for a spin logic device based on magneto‐electric effect and spin Hall effect

Wang

Zhang

et al. 2023

Micro & Nano Letters

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Based on magneto-electric (ME) effect and spin Hall effect (SHE), the authors propose a novel spin logic device named MESH-SLD. In MESH-SLD, the charge current is transmitted in the channel by employing inverse SHE, which solves the dissipation problem of spin current in the channel of all-spin logic device (ASLD). By using a magnetizationdynamics/spin-transport hybrid model, the authors have investigated the influence of working voltage, channel lengths, and materials on the performance of the MESH-SLD. And the simulation results show that the energy dissipation of the MESH-SLD only increases approximately linearly with the increase of channel length, while the switching delay remains almost unchanged. In addition, with the increase of the spin Hall angle of the channel material, the energy dissipation and the minimum working voltage of the MESH-SLD decrease significantly. Most importantly, compared with conventional ASLD, the proposed MESH-SLD improve the switching delay and the energy dissipation by about 2.5 times and 851.8 times, respectively.

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Scaling Limits on All-Spin Logic

Cited by 12 publications

References 15 publications

Low-power Spin Valve Logic using Spin-transfer Torque with Automotion of Domain Walls

Low-power Spin Valve Logic using Spin-transfer Torque with Automotion of Domain Walls

A Probability-Density Function Approach to Capture the Stochastic Dynamics of the Nanomagnet and Impact on Circuit Performance

Proposal for a spin logic device based on magneto‐electric effect and spin Hall effect

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