Scaling of GaAs/AlGaAs laser diodes for submilliampere threshold current

Marclay, E.; Arent, D. J.; Harder, C.; Meier, Hektor; Walter, W.; Webb, David J.

doi:10.1049/el:19890598

Cited by 33 publications

(4 citation statements)

References 6 publications

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“…For short in-plane lasers, Harder, et al [14] have correctly shown that if the cavity lifetime is kept constant as the cavity length is shortened, then the terms in the threshold gain equation remain the same, and as a result, both the threshold gain and the differential efficiency remain the…”

Section: B Calculationsmentioning

confidence: 99%

Efficient, High-Speed, Monolithic Optoelectronic Circuits Using Quantum- Confined Structures

Coldren¹

1991

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Section: B Calculationsmentioning

confidence: 99%

Efficient, High-Speed, Monolithic Optoelectronic Circuits Using Quantum- Confined Structures

Coldren¹

1991

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“…The quest for lower threshold currents has given rise to efforts in laser diode scaling, through which it should be possible to reduce further the threshold current [17].…”

Section: Rc; \Enmentioning

confidence: 99%

High-speed GaAs/AlGaAs optoelectronic devices for computer applications

Harder

Zeghbroeck²,

Kesler

et al. 1990

IBM J. Res. & Dev.

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We present an overview, mainly of worl< in our laboratory, of low-threshold GaAs/AIGaAs quantum-well laser diodes and GaAs metalsemiconductor-metal photodetectors-two optoelectronic devices which show good promise for use in computer-related communication. Present-day telecommunication device technology (based on InP materials) is not well suited to the requirements of optical data communication among and within computers because the computer environment is much more demanding. It imposes a higher ambient temperature on the devices, and requires denser packaging and smaller power dissipation per device, as well as a high degree of parallelism. The GaAs/AIGaAs device technology is ideally suited to this task because

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“…However the lowest threshold currents are achieved with single quantum well lasers (7)(8)(9), whereas the other components require several wells. Compatibility of lasers and modulators for monolithic integration is discussed here, with a systematic study of the influence of the number of wells on QW lasers and a comparison with the corresponding modulator performances.…”

Section: Introductionmentioning

confidence: 99%

GaAs–AlGaAs multiple-quantum-well lasers for monolithic integration with optical modulators

Chatenoud¹,

Dzurko²,

Dion³

et al. 1991

Can. J. Phys.

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Calculations of multiple-quantum-well laser threshold current show that a common minimum current value exists for each number of wells, at an appropriate cavity length. This optimum cavity length decreases rapidly with increasing number of wells, for instance from about 300 to 110 p n for one to three wells. Granded-index separate-confinement heterostructure (GRINSCH) lasers with 1-10 quantum wells, grown by molecular beam epitaxy, show consistently low threshold currents that agree well with theoretical predictions. Lasing is achieved at 160 A cm-' and 4.6 mA for broad-area and ridge waveguide single-quantum-well devices, respectively. The field-dependent electroabsorption of these d e~i c e s when operating as wave-guide modulators indicates good modulation properties for one and three quantum-well structures, with on:off ratios above 55 at lasing wavelength. The behavior becomes more complex with increasing number of wells. This systematic study of discrete multiple-quantum-well lasers and modulators demonstrates that GRINSCH structures with 1-3 wells are the most suitable for monolithic integration. Design rules for the laser cavity are also presented for numbers of wells ranging from I to 10.Le calcul du courant de seuil des diodes laser a multiples puits quantiques (MPQ) montre qu'il existe une valeur minimale du courant pour tout nombre de puits, pour une longueur de cavitC appropriCe. Cette longueur de cavite optimale dCcroit rapidement quand le nombre de puits augmente, passant par exemple d'environ 300 pour un puits a 110 k m pour trois puits. Experimentalemerit les courants de seuil de lasers GRINSCH ayant 1 a 10 puits, CpitaxiCs par EJM, restent faibles et sont en bon accord avec les predictions theoriques. Le seuil laser se situe B 160 A cm-' pour des composants contact large, et 4,6 mA pour les lasers a ruban nervure. Le fonctionnement en modulateur guide d'onde des dispositifs a un et trois puits s'avere bon Cgalement, avec notamment des facteurs de contraste supkrieurs a 55 a la longueur d'onde d'Cmission laser. Les variations de 1'Clectroabsorption deviennent plus complexes avec plus de puits quantiques. Cette Ctude systematique des diodes laser et des modulateurs MPQ montre que les structures ayant un a trois puits sont les plus favorables pour I'intCgration monolithique. Des regles de conception sur la cavitC laser sont CnoncCes pour des structures de I a 10 puits.Can.

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Scaling of GaAs/AlGaAs laser diodes for submilliampere threshold current

Cited by 33 publications

References 6 publications

Efficient, High-Speed, Monolithic Optoelectronic Circuits Using Quantum- Confined Structures

Efficient, High-Speed, Monolithic Optoelectronic Circuits Using Quantum- Confined Structures

High-speed GaAs/AlGaAs optoelectronic devices for computer applications

GaAs–AlGaAs multiple-quantum-well lasers for monolithic integration with optical modulators

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