Scaling of the anomalous Hall effect in low Mn concentration (Ga,Mn)As

Shen, S. C.; Liu, X.; Ge, Z.; Furdyna, J. K.; Dobrowolska, M.; Jaroszyński, J.

doi:10.1063/1.2838477

Cited by 12 publications

(13 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As mentioned in Sec. I, the data presented by Shen et al 17 for lowconductivity (Ga,Mn)As follows a very similar scaling relation σ (AH) xy ∝ σ 1.5 xx (dashed-dotted line), which they claim to be incompatible with existing scattering theories. If the MR of a sample is large, the scaling relation in Eq.…”

Section: Resultsmentioning

confidence: 58%

“…11,12,13,14,15,16 Whereas most papers concerning the AHE in (Ga,Mn)As are primarily focused on the metallic regime 11,12,13,14,15,16 , only a few systematic studies concentrate on the low-conductivity regime. 13,17,18 Allen et al 18 examined the AHE in digitally doped (Ga,Mn)As structures with hopping transport on the insulating side of the metal insulator transition (MIT). Recently, Shen et al 17 focused on the lowconductivity regime of (Ga,Mn)As with ρ xx between 0.01 and 2 Ω cm.…”

Section: Introductionmentioning

confidence: 99%

“…13,17,18 Allen et al 18 examined the AHE in digitally doped (Ga,Mn)As structures with hopping transport on the insulating side of the metal insulator transition (MIT). Recently, Shen et al 17 focused on the lowconductivity regime of (Ga,Mn)As with ρ xx between 0.01 and 2 Ω cm. They experimentally ascertained a scaling relation ρ (AH) yx ∝ ρ γ xx with a scaling exponent of γ = 0.5.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Scaling relation of the anomalous Hall effect in (Ga,Mn)As

et al. 2009

View full text Add to dashboard Cite

We present magnetotransport studies performed on an extended set of (Ga,Mn)As samples at 4.2 K with longitudinal conductivities σxx ranging from the low-to the high-conductivity regime. The anomalous Hall conductivity σ (AH) xy is extracted from the measured longitudinal and Hall resistivities. A transition from σ (AH) xy = 20 Ω −1 cm −1 due to the Berry phase effect in the high-conductivity regime to a scaling relation σ (AH) xy ∝ σ 1.6 xx for low-conductivity samples is observed. This scaling relation is consistent with a recently developed unified theory of the anomalous Hall effect in the framework of the Keldysh formalism. It turns out to be independent of crystallographic orientation, growth conditions, Mn concentration, and strain, and can therefore be considered universal for low-conductivity (Ga,Mn)As. The relation plays a crucial role when deriving values of the hole concentration from magnetotransport measurements in low-conductivity (Ga,Mn)As. In addition, the hole diffusion constants for the high-conductivity samples are determined from the measured longitudinal conductivities.

show abstract

Section: Resultsmentioning

confidence: 58%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Scaling relation of the anomalous Hall effect in (Ga,Mn)As

et al. 2009

View full text Add to dashboard Cite

show abstract

“…The samples (both as-grown and annealed) described above were characterized by magneto-transport measurements using the six-probe Hall geometry with indium ohmic contacts in a Janis continuous helium flow cryostat equipped with a superconducting magnet system, allowing us to sweep the magnetic field up to 6 T at various temperatures between 2 and 300 K. The hole concentration in the samples was determined from magneto-transport data obtained at low temperature (< 10 K) using a method described in Ref. 20. The Curie temperatures of the samples were obtained from SQUID magnetization data.…”

Section: Sample Fabrication and Experimental Proceduresmentioning

confidence: 99%

“…9 and 19 applies to both intrinsic and side-jump mechanisms, making it difficult to distinguish between the two processes; and also given the fact that Mn atoms in these materials act simultaneously as the source of magnetic moments and as acceptors, which complicates the analysis of scattering processes in this material. Furthermore, several recent studies of (Ga,Mn)As samples have reported a universal empirical scaling relation between the anomalous Hall and the longitudinal conductivities σ xy ∝ σ γ xx with γ of about 1.6, which holds over a wide range of conductivities (between 0.01 and 100 Ω −1 cm −1 ) 13,14,20 . By very simple algebra (see Sec.…”

mentioning

confidence: 95%

Scaling relations between anomalous Hall and longitudinal transport coefficients in metallic (Ga,Mn)As films

Liu

Shen

et al. 2011

Phys. Rev. B

Self Cite

View full text Add to dashboard Cite

We report a systematic study of the temperature dependence of the anomalous Hall and longitudinal conductivities σxy and σxx and resistivities ρxy and ρxx in a series of metallic (Ga,Mn)As samples. Two universal scaling relations are obtained: σxy ∝ σ 1.5 xx , obtained from measurements at a fixed low temperature (2.0 K) on a series of samples with different Mn concentrations; and ρxy/m ∝ ρ 2 xx , where m is normalized magnetization, obtained from the temperature variation of ρxx and ρxy measured on each sample of the series. The former scaling relation is, however, found to break down for highly conducting (Ga,Mn)As samples (σxx > 100 Ω −1 cm −1 ). The latter scaling relation leads to a magnetization-dependent anomalous Hall coefficient, which we attribute to the emergence of magnetization fluctuations at high temperatures.

show abstract