Scaling properties of the plateau transitions in the two-dimensional hole gas system

Wang, Xuebin; Liu, Haiwen; Zhu, Junbo; Shan, Pujia; Wang, Pengjie; Fu, Hailong; Du, Lingjie; Pfeiffer, L. N.; West, K. W.; Xie, Xiaoming; Du, Rui-Rui; Lin, Xi

doi:10.1103/physrevb.93.075307

Cited by 8 publications

(6 citation statements)

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“…9: the line L ϕ = const crosses the curves ξ(ν) just at the intermediate region of γ values. This situation, quite possibly, is typical for modulationdoped GaAs/AlGaAs heterostructures 51,52,[70][71][72][73][74] resulting in "nonuniversal" values of parameter κ in the range of (0.5 − 0.7). Note that for HgTe based heterostructure with inverted band spectrum (d W = 21nm, n = 1.5 × 10 15 m −2 ) a scaling regime in the QHE has been investigated earlier by Olshanetsky et al in 22 and a lower value, γ = 0.49, was obtained for 1 → 2 PPT at helium temperatures (0.3 − 3.0)K.…”

Section: Interpretation Of Our Resultsmentioning

confidence: 99%

“…However, in sharp contrast to the short range alloy potential scattering in InGaAs/InP samples 61 , classical and most studied AlGaAs/GaAs heterostructure has long range Coulomb scattering on remote (by a spacer) ionized impurities which results in nonuniversality of the temperature exponent κ (see both the early [66][67][68][69] and the recent works 51,52,[70][71][72][73][74] ).…”

Section: B Large-scale Random Potentialmentioning

confidence: 99%

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Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure

Gudina,

Arapov,

Neverov

et al. 2017

Preprint

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We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2-50 K. The temperature dependence of the QH plateau-plateau transition (PPT) widths and of variable range hopping (VRH) conduction on the Hall plateaus are analyzed. The data are presented in a genuine scale form both for PPT regions and for VRH regime. Estimations for the degree of the carrier localization length divergence reveal a decisive role of the long-range random potential (the potential of remote ionized impurities) in the localization-delocalization processes in the QH regime for the system under study.

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Section: Interpretation Of Our Resultsmentioning

confidence: 99%

Section: B Large-scale Random Potentialmentioning

confidence: 99%

Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure

Gudina,

Arapov,

Neverov

et al. 2017

Preprint

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“…A recent study on the quantum phase transition between a Chern insulator to an axion insulator driven by the external magnetic field in even number layers of topological antiferromagnet MnBi 2 Te 4 reports a critical exponent κ~0.47 41 . In the QH plateau-to-plateau transition, values of κ ranging from 0.15 tõ 0.8 have been reported in the two-dimensional electron/hole gas samples 2,5,[42][43][44][45][46][47][48][49] . Several factors can cause larger κ, e.g., the high concentration of ionized impurities or clustered impurities 4 .…”

Section: Discussionmentioning

confidence: 97%

Scaling behavior of the quantum phase transition from a quantum-anomalous-Hall insulator to an axion insulator

Chen

Sun

et al. 2020

Nat Commun

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The phase transitions from one plateau to the next plateau or to an insulator in quantum Hall and quantum anomalous Hall (QAH) systems have revealed universal scaling behaviors. A magnetic-field-driven quantum phase transition from a QAH insulator to an axion insulator was recently demonstrated in magnetic topological insulator sandwich samples. Here, we show that the temperature dependence of the derivative of the longitudinal resistance on magnetic field at the transition point follows a characteristic power-law that indicates a universal scaling behavior for the QAH to axion insulator phase transition. Similar to the quantum Hall plateau to plateau transition, the QAH to axion insulator transition can also be understood by the Chalker–Coddington network model. We extract a critical exponent κ ~ 0.38 ± 0.02 in agreement with recent high-precision numerical results on the correlation length exponent of the Chalker–Coddington model at ν ~ 2.6, rather than the generally-accepted value of 2.33.

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“…However, in sharp contrast to the short range alloy potential scattering in InGaAs/InP samples [10], the most perfect and the most studied AlGaAs/GaAs heterostructure has long range Coulomb scattering on remote (by a spacer) ionized impurities which results in nonuniversality of the temperature exponent κ (see both the early [16][17][18][19] and the recent works [20][21][22][23][24][25][26]).…”

Section: Large-scale Random Potentialmentioning

confidence: 99%

“…Here is a table of experimental results for critical exponent κ values extracted from the temperature dependences of QHE plateau-plateau transition (PPT) width in modulation-doped GaAs/AlGaA heterostructures [11,[16][17][18][19][20][21][22][23][24][25][26].…”

Section: Appendixmentioning

confidence: 99%

Scaling laws under quantum Hall effect for a smooth disorder potential

Gudina

Клепикова

Neverov

et al. 2019

Low Temperature Physics

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We carried out the analysis of discovered experimental values of the critical parameter κ for the quantum Hall plateau-plateau transitions in modulation-doped GaAs/AlGaAs heterostructures. It turned out that these values are in the main concentrated at the range of 0.5-0.7. We argue that within the theoretical concepts for the largescale disorder potential, it corresponds to a borderland between quantum tunnelling processes and classical percolation regime. Just, the critical exponent value for the bandwidth of delocalized states, κ = 0.54 ± 0.01, obtained by us for HgTe-based heterostructure with inverted band spectrum, can be associated with a smooth character of impurity potential in our system.

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Scaling properties of the plateau transitions in the two-dimensional hole gas system

Cited by 8 publications

References 50 publications

Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure

Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure

Scaling behavior of the quantum phase transition from a quantum-anomalous-Hall insulator to an axion insulator

Scaling laws under quantum Hall effect for a smooth disorder potential

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