Scaling the modulation bandwidth and phase efficiency of a silicon optical modulator

Liu, Ansheng; Samara-Rubio, Dean; Liao, Ling; Paniccia, Mario

doi:10.1109/jstqe.2005.845618

Cited by 45 publications

(6 citation statements)

References 17 publications

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“…Recent progress in silicon photonics is being heralded by the observation of first the Raman gain [10,11] then stimulated Raman scattering (SRS) [12] in a crystalline silicon waveguide, SRS "lasing" first in pulse [13,14] modulated [15] and later in CW [16] silicon Raman "lasers," and finally the hybrid silicon Raman "laser" [17]. Additionally, silicon modulators [18,19] have been developed first using a metal-oxide-semiconductor (MOS) capacitor [20], a Mach-Zehnder [21] configuration, SRS [22], and a microring [23] configuration. Recently, a silicon microring based wavelength converter has been realized [24].…”

Section: Introductionmentioning

confidence: 99%

Luminescence of black silicon

et al. 2008

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Room temperature visible and near-infrared photoluminescence from black silicon has been observed. The black silicon is manufactured by shining femtosecond laser pulses on silicon wafers in air, which were later annealed in vacuum. The photoluminescence is quenched above 120 K due to thermalization and competing nonradiative recombination of the carriers. The photoluminescence intensity at 10K depends sublinearly on the excitation laser intensity confirming band tail recombination at the defect sites.

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Section: Introductionmentioning

confidence: 99%

Luminescence of black silicon

et al. 2008

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“…1,2 One of the most important components of an optical communications system is the optical modulator. The new generation of optical modulators can be classified into three common groups: optical modulators based on metal oxide semiconductor (MOS) capacitor, [5][6][7] optical modulators based on PIN diode in forward bias, [8][9][10][11] and optical modulators based on PN diode in reverse bias. The new generation of optical modulators can be classified into three common groups: optical modulators based on metal oxide semiconductor (MOS) capacitor, [5][6][7] optical modulators based on PIN diode in forward bias, [8][9][10][11] and optical modulators based on PN diode in reverse bias.…”

Section: Introductionmentioning

confidence: 99%

Analysis and simulation of ring resonator silicon electro-optic modulators based on PN junction in reverse bias

Jafari

Akbari

2014

Opt. Eng

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The theory of silicon optical modulators of ring resonators based on PN diode in reverse bias is primarily discussed. It secondarily provides a full-featured simulator to investigate the behavior of such modulators. Wave equation for ring structure will be solved by using the conformal transformation method and the matrix method as it was used to analyze bent planar optical waveguides. Power coupling between ring and straight waveguides will be calculated by coupled theory of nonparallel waveguides based on experimental results. The time response demonstrates the capability of this device to operate correctly at up to 10 Gbs −1 bitrate, and the frequency spectrum analysis of device shows a >17 dB drop in transmission at the resonant wavelength of ∼1574.9 nm.

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“…Recent progress in silicon photonics integration is being heralded by the observation of first the Raman gain [10,11] then stimulated Raman scattering (SRS) [12] in a crystalline silicon waveguide, SRS lasing first in pulse [13,14] modulated [15] and later in CW [16] silicon Raman lasers and finally the hybrid silicon Raman laser [17]. Additionally, silicon modulators [18,19] have been developed first using a metal-oxide-semiconductor (MOS) capacitor [20], a Mach-Zehnder [21] configuration, SRS [22] and a microring [23] configuration. Silicon-germanium resonant cavity enhanced (RCE) photodetectors are being developed for all siliconbased electrophotonic microintegration.…”

Section: Introductionmentioning

confidence: 99%

Silicon microspheres for near-IR communication applications

Serpengüzel

Demir

2008

Semicond. Sci. Technol.

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We have performed transverse electric and transverse magnetic polarized elastic light scattering calculations at 90 • and 0 • in the o-band at 1.3 µm for a 15 µm radius silicon microsphere with a refractive index of 3.5. The quality factors are on the order of 10 7 and the mode/channel spacing is 7 nm, which correlate well with the refractive index and the optical size of the microsphere. The 90 • elastic light scattering can be used to monitor a dropped channel (drop port), whereas the 0 • elastic scattering can be used to monitor the transmission channel (through port). The optical resonances of the silicon microspheres provide the necessary narrow linewidths that are needed for high-resolution optical communication applications. Potential telecommunication applications include filters, modulators, switches, wavelength converters, detectors, amplifiers and light sources. Silicon microspheres show promise as potential building blocks for silicon-based electrophotonic integration.

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Scaling the modulation bandwidth and phase efficiency of a silicon optical modulator

Cited by 45 publications

References 17 publications

Luminescence of black silicon

Luminescence of black silicon

Analysis and simulation of ring resonator silicon electro-optic modulators based on PN junction in reverse bias

Silicon microspheres for near-IR communication applications

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