Scaling Trends of Digital Single-Event Effects: A Survey of SEU and SET Parameters and Comparison With Transistor Performance

Kobayashi, Daisuke

doi:10.1109/tns.2020.3044659

Cited by 63 publications

(21 citation statements)

References 210 publications

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“…For the simulations it is also necessary to define the sensitive volume size and critical charges characteristic of the technological nodes. For the critical charge, an extensive analysis for all the technology nodes of bulk silicon SRAMs is reported in the work from Kobayashi [39]. Multiple critical charges for the same node were evidenced in this work.…”

Section: Analysis For Diverse Node Technologiesmentioning

confidence: 75%

An Analysis of the Significance of the ¹⁴N(n, p) ¹⁴C Reaction for Single-Event Upsets Induced by Thermal Neutrons in SRAMs

Coronetti

Alía

Lucsanyi

et al. 2023

IEEE Trans. Nucl. Sci.

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The thermal neutron threat to the reliability of electronic devices caused by 10 B capture is a recognized issue that prompted changes in the manufacturing process of electronic devices with the aim of limiting as much as possible the presence of this isotope nearby device sensitive volumes. 14 N can also capture thermal neutrons and release low-energy protons (through the 14 N(n,p) 14 C reaction) that have high enough linear energy transfer to cause single-event upsets (SEU). Typically, nitrogen is used in thin barrier layers made of TaN or TiN or even as insulator in the form of Si3N4. Numerical simulations on sensitive volumes calibrated on proton and ion experimental data and with an accurate description of the metallization layer on top of the sensitive region show that the presence of nitrogen in these thin barrier layers can be enough to justify the experimentally observed thermal neutron SEU cross section for a static random access memory sensitive to low-energy protons. Nevertheless, the expected SEU cross section from thermal neutrons is usually a few orders of magnitude lower than that of high-energy particles, therefore, not representing an important threat in atmospheric applications. At the same time, for high-energy accelerators, the contribution to the total soft error rate could become substantial, though easy to handle by margins.

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Section: Analysis For Diverse Node Technologiesmentioning

confidence: 75%

An Analysis of the Significance of the ¹⁴N(n, p) ¹⁴C Reaction for Single-Event Upsets Induced by Thermal Neutrons in SRAMs

Coronetti

Alía

Lucsanyi

et al. 2023

IEEE Trans. Nucl. Sci.

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“…See [11] for example. A survey [7] suggests ζ ≈ 2 across technology nodes. * 2 MeV•cm 2 /mg was used in the original article [8].…”

Section: Review Of the Original Derivationmentioning

confidence: 99%

“…R ADIATION is a famous source of soft errors in staticrandom access memories (SRAMs) [1]- [7]. Even a single strike of particle radiation such as alpha-and cosmic-rays may induce noise charge that can overwhelm the noise margin of SRAM cell, leading to an undesired flip from a logic '1' or '0' originally kept in the cell to its counterpart.…”

Section: Introductionmentioning

confidence: 99%

Threshold and Characteristic LETs in SRAM SEU Cross Section Curves

Kobayashi

Uematsu

Hirose

2023

IEEE Trans. Nucl. Sci.

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Characterizing the sensitivity of a static random access memory (SRAM) to single-event upset (SEU) is an essential task for assuring its soft-error reliability. However, this task often imposes a burden because it usually requires many cycles of accelerator-based irradiation tests. A model recently proposed is a very simple exponential-type equation but has strong potential to reduce the burden because of its capability to predict SEU cross sections in various conditions. The aim of the present study is to revisit the model in terms of threshold parameters called threshold linear energy transfer (LET) and critical charge. Although these threshold parameters are widely used as key parameters that describe whether an SEU occurs or not, they are not seen in the model. This article explores such missing threshold parameters, suggesting that they successfully appear by introducing a factor of five to the original expression.

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“…Memories are subjected to occasional, undesired state changes induced by crossing ionising particles. These events are called Single or Multiple Event Upset (SEU or MEU) depending on the number of digital nodes affected [7]. They cause problems (soft errors) in electronics with high transistor density.…”

Section: The Digital Sensor Conceptmentioning

confidence: 99%

A novel concept for a fully digital particle detector

Casse¹,

Massari²,

Franks³

et al. 2022

J. Inst.

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Silicon sensors are the most diffuse position sensitive device in particle physics experiments and in countless applications in science and technology. They had a spectacular progress in performance over almost 40 years since their first introduction, but their evolution is now slowing down. The position resolution for single particle hits is larger than a few microns in the most advanced sensors. This value was reached already over 30 years ago [1]. The minimum ionising path length a sensor can detect is several tens of microns. There are fundamental reasons why these limits will not be substantially improved by further refinements of the current technology. This makes silicon sensors unsuitable to applications where the physics signature is the short path of a recoiling atom and constrains the layout of physics experiments where they represent by far the best option like high energy physics collider experiments. In perspective, the availability of sensors with sub-micron spatial resolution, in the order of a few tens of nanometres, would be a disruptive change for the sensor technology with a foreseeable huge impact on experiment layout and various applications of these devices. For providing such a leap in resolution, we propose a novel design based on a purely digital circuit. This disruptive concept potentially enables pixel sizes much smaller than 1 μm2 and a number of advantages in terms of power consumption, readout speed and reduced thickness (for low mass sensors).

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Scaling Trends of Digital Single-Event Effects: A Survey of SEU and SET Parameters and Comparison With Transistor Performance

Cited by 63 publications

References 210 publications

An Analysis of the Significance of the ¹⁴N(n, p) ¹⁴C Reaction for Single-Event Upsets Induced by Thermal Neutrons in SRAMs

An Analysis of the Significance of the ¹⁴N(n, p) ¹⁴C Reaction for Single-Event Upsets Induced by Thermal Neutrons in SRAMs

Threshold and Characteristic LETs in SRAM SEU Cross Section Curves

A novel concept for a fully digital particle detector

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Scaling Trends of Digital Single-Event Effects: A Survey of SEU and SET Parameters and Comparison With Transistor Performance

Cited by 63 publications

References 210 publications

An Analysis of the Significance of the 14N(n, p) 14C Reaction for Single-Event Upsets Induced by Thermal Neutrons in SRAMs

An Analysis of the Significance of the 14N(n, p) 14C Reaction for Single-Event Upsets Induced by Thermal Neutrons in SRAMs

Threshold and Characteristic LETs in SRAM SEU Cross Section Curves

A novel concept for a fully digital particle detector

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Product

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An Analysis of the Significance of the ¹⁴N(n, p) ¹⁴C Reaction for Single-Event Upsets Induced by Thermal Neutrons in SRAMs

An Analysis of the Significance of the ¹⁴N(n, p) ¹⁴C Reaction for Single-Event Upsets Induced by Thermal Neutrons in SRAMs