Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure

Suda, Jun; Nakamura, Syun-ichi; Miura, Mineo; Kimoto, Tsunenobu; Matsunami, Hiroyuki

doi:10.1143/jjap.41.l40

Cited by 13 publications

(8 citation statements)

References 2 publications

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“…17) A cross-sectional scanning electron microscopy (SEM) image of the sample (not shown here) showed clear contrast due to the difference in carrier type. 18) The observed thicknesses of the top p-layer (220 nm) and the buried n-layer (610 nm) agree with the transport of ion in matter (TRIM) simulation results.…”

Section: Experimental Methodssupporting

confidence: 79%

Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching

Suda¹,

Watanabe²,

Fukunaga³

et al. 2009

Jpn. J. Appl. Phys.

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An electrostatic-actuated suspended ribbon structure composed of single-crystalline SiC is presented. All the main parts of the structure, namely, a suspended ribbon, posts, base plate, and electrical connections, are made of homoepitaxially grown single-crystalline 4H-SiC with selective ion implantations. Electrical isolation between the ribbon and the base plate is established with a pnp junction. The structure is fabricated by a combination of reactive ion etching (RIE) and doping-selective photoelectrochemical (PEC) etching. The suspended ribbon is actuated by applying a voltage between the ribbon and the base plate.

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Section: Experimental Methodssupporting

confidence: 79%

Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching

Suda¹,

Watanabe²,

Fukunaga³

et al. 2009

Jpn. J. Appl. Phys.

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“…In this study, the lateral spreads of ion-implanted Al and P atoms in 4H-SiC are accurately determined through three methods, channel thickness dependence of threshold voltage in side-gate JFETs, 16,27) scanning electron microscope (SEM), and scanning capacitance microscopy (SCM) observations. [28][29][30][31] Results of the lateral spreads show good agreement with each other. The shape of the lateral distribution is also discussed.…”

Section: Introductionsupporting

confidence: 64%

Lateral spreads of ion-implanted Al and P atoms in silicon carbide

Jin¹,

Nakajima²,

Kaneko³

et al. 2021

Jpn. J. Appl. Phys.

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Lateral spreads of Al and P atoms implanted (10 ∼ 700 keV) into a high-purity semi-insulating 4H silicon carbide (SiC) substrate have been experimentally investigated. Scanning capacitance microscopy observation revealed that lateral distributions are highly dependent on the implantation energies of ions. Asymmetric lateral distributions were observed along the [ 11 2 ¯ 0 ] direction, which may be attributed to the 4° off-angle of the substrate. The lateral spreads are determined to be 0.33 μm for Al atoms, 0.38 ± 0.02 μm for P atoms along the [ 1 1 ¯ 00 ] direction, and 0.28 μm/0.38 μm for Al atoms, 0.25 μm/0.40 μm for P atoms along the [ 11 2 ¯ 0 ] direction (upstream/downstream side of step flow). Comparison between the lateral spreads of Al and P atoms is discussed with Al and P stopping powers and ranges in SiC.

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“…In section 1.2.3, the possibility of cleaving samples and imaging them in crosssection to reveal sub-surface layers was discussed. This simple approach to the preparation of sample cross-sections is applied to the study of many compound semiconductors by SSRM, including InP [74], GaAs [75], SiC [76] and ZnO [77]. It has also been applied to the study of GaN heteroepitaxial layers grown on sapphire for both SSRM [21] and SCM [78] studies, but the different crystallographic orientation of layer and substrate makes it difficult to form a flat cleaved GaN surface, and large topographic steps are often present, resulting in artefacts in the electrical measurement as the tip-surface contact area changes [78].…”

Section: Cross-section Sample Preparationmentioning

confidence: 99%

Advances in AFM for the electrical characterization of semiconductors

2008

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Atomic force microscopy (AFM) is a key tool for nanotechnology research and finds its principal application in the determination of surface topography. However, the use of the AFM tip as a probe of electrical properties allows enormous insights into material functionality at the nanoscale. Hence, a burgeoning suite of techniques has been developed to allow the determination of properties such as resistivity, surface potential and capacitance simultaneously with topographic information. This has required the development of new instrumentation, of novel probes and of advanced sample preparation techniques. In order to understand and quantify the results of AFM-based electrical measurements, it has proved important to consider the interplay of topographic and electrical information, and the role of surface states in determining a material's electrical response at the nanoscale. Despite these challenges, AFM-based techniques provide unique insights into the electrical characteristics of ever-shrinking semiconductor devices and also allow us to probe the electrical properties of defects and self-assembled nanostructures.

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Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure

Cited by 13 publications

References 2 publications

Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching

Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching

Lateral spreads of ion-implanted Al and P atoms in silicon carbide

Advances in AFM for the electrical characterization of semiconductors

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