Scanning capacitance microscopy characterization of AIIIBV epitaxial layers

Abstract

The applicability of scanning capacitance microscopy (SCM) technique for chosen electrical properties characterization of AIIIBV structures fabricated by Metalorganic Vapor Phase Epitaxy (MOVPE) was examined. The calibration curves for quantitative characterization of doping levels in GaAs layers were created. The AlGaN/GaN/Si heterostructures for high electron mobility transistor fabrication and InGaAs tunnel junction for tandem solar cell characterization were presented. The crucial factors of measurement conditions which could influence the obtained results were also discussed.

A cross‐sectional scanning capacitance microscopy characterization of GaAs based solar cell structures

“…The measured SCM signal is defined as dC/dV amplitude changes for the flatband condition signed by the slope of the dC/dV curve. The description of SCM measurement methodology of AIIIBV compounds can be found in . The SCM cross‐section profiles of test structures were obtained by scanning cleaved surfaces of samples covered with a thin layer of native oxide (grown by their exposition to air).…”

Metrology and Measurement Systems

“…In this way not only the surface topography is recorded but its chemical and physical properties as well. The SPM applications span from microbiology and biotechnology up to material science and micro-and nano-electronics [9][10][11][12].…”

Применение Сканирующей Емкостной Силовой Микроскопии Для Выявления Примесных Фаз В Сегнетоэлектрике Триглицинсульфат

“…СЕСМ, следуя классическому макроскопическому способу определять степень легирования полупроводников на основе зависимости электрической емкости от напряжения C(U), стала методом контроля двумерного распределения легирующей примеси в устройствах микроэлектроники [3][4][5]. В полупроводниковой индустрии этот метод нашел применение для анализа работы и отказов устройств, визуализации эффектов ионной имплантации [6] и характеризации локальных электрических параметров эпитаксиальных полупроводниковых гетероструктур [7]. Применительно к диэлектрикам круг задач для СЕСМ можно очертить как связанный с количественными измерениями толщины и статической диэлектрической проницаемости на наноуровне.…”