Scanning infrared microscopy investigation of copper precipitation in cast multicrystalline silicon

Xi, Zengzhe; Yang, Deren; Moeller, H.J.

doi:10.1016/j.infrared.2005.02.029

Cited by 4 publications

(3 citation statements)

References 26 publications

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“…[8][9][10][11][12] Both the principle and application of SIRM have been carefully discussed by Török and Mule'stagno 8 and Booker et al, 9 Booker et al pointed out that SIRM can image particles in silicon materials down to 30 nm in size. 9 To date, SIRM has been widely employed to investigate BMDs in silicon materials.…”

Section: Methodsmentioning

confidence: 99%

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Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Zeng

Chen

et al. 2010

Journal of Elec Materi

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Through an investigation of oxygen precipitation and extended defects in Czochralski silicon (CZ-Si) specimens subjected to different isothermal anneals, by scanning infrared microscopy and preferential etching combined with optical microscopy, the correlation between the sizes of oxygen precipitates and the generation of extended defects is revealed. It is found that extended defects are generated when oxygen precipitates grow. Afterward, the sizes of extended defects increase, while those of oxygen precipitates do not change significantly. For the onset of the generation of extended defects, we define the maximum size of oxygen precipitates as a critical size for the generation of extended defects. Moreover, it is revealed that this critical size decreases for higher annealing temperatures or more oxidizing ambients.

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Section: Methodsmentioning

confidence: 99%

“…9 To date, SIRM has been widely employed to investigate BMDs in silicon materials. [10][11][12][13] It is known that defects are detectable by SIRM because of their strain contrast. The strain of oxygen-precipitation-induced extended defects generally originates from oxygen precipitates, induced dislocations, and stacking faults.…”

Section: Methodsmentioning

confidence: 99%

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Zeng

Chen

et al. 2010

Journal of Elec Materi

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“…This mi− croscope technology is available to image in a noninvasive way that applies to biological tissues [2], semiconductors [3][4][5], and integrated circuits [6,7]. Thus, there are tremen− dous efforts to develop and improve the scanning system for image resolution, contrast, and scanning speed by building better sources [8,9] and specialty probes [10,11].…”

Section: Introductionmentioning

confidence: 99%

Near infrared imaging of micro-structured polymer-metal surface pattern

Han

Lee

et al. 2010

Opto-Electronics Review

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Two-dimensional infrared scanning microscopy images of micro-structured surface patterns in an organic transistor device with metal electrode stripes on a polymer channel layer have been demonstrated. A compact single mode optical fiber scanning probe which has a micro dome-shape lens at the tip end was used for the scanning in which reflected beam intensities are coupled back to the optical fiber transceiver depending on the returned power of the sample material. Based on the experiment, the obtained structural dimensions of the micro structure specimen were well matched to the designed ones. These images were compared to the digital microscopy photos for a potential usage to conduct not only the in situ microscopic electrode pattern monitoring of the device but also to non-destructively investigate any surface reflecting material in micrometer scales.

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Basic growth and crystallographic quality of Si crystals for solar cells

Nakajima¹

2020

Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces

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Scanning infrared microscopy investigation of copper precipitation in cast multicrystalline silicon

Cited by 4 publications

References 26 publications

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Near infrared imaging of micro-structured polymer-metal surface pattern

Basic growth and crystallographic quality of Si crystals for solar cells

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