Scanning microwave microscopy/spectroscopy on metal-oxide-semiconductor systems

Smoliner, J.; Huber, Hans-Peter; Hochleitner, M.; Moertelmaier, Manuel; Kienberger, Ferry

doi:10.1063/1.3482065

Cited by 33 publications

(16 citation statements)

References 21 publications

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“…Using a simple MOS model for our samples, a monotonic behavior of the phase signal recorded across differently doped areas is found in accordance with Ref. 14 measurements are discussed in detail. Finally, the influence of a material system having a specific frequency dependent dielectric function on top of the MOS system is discussed.…”

Section: Introductionsupporting

confidence: 85%

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Phase and amplitude sensitive scanning microwave microscopy/spectroscopy on metal–oxide–semiconductor systems

Humer

Huber

Kienberger

et al. 2012

Journal of Applied Physics

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Articles you may be interested inScanning microwave microscopy/spectroscopy on metal-oxide-semiconductor systems Local strain measurement in a strain-engineered complementary metal-oxide-semiconductor device by geometrical phase analysis in the transmission electron microscope Appl. Phys. Lett. 93, 081909 (2008); 10.1063/1.2970050 Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy J. Vac. Sci. Technol. B 22, 358 (2004); 10.1116/1.1627792Two dimensional dopant and carrier profiles obtained by scanning capacitance microscopy on an actively biased cross-sectioned metal-oxide-semiconductor field-effect transistor Comparison of two-dimensional carrier profiles in metal-oxide-semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modelingIn this paper, an analytical model for phase and amplitude sensitive scanning microwave microscopy on metal-oxide-semiconductor structures is presented. The phase and amplitude of the microwave signals are calculated as a function of operation frequency, oxide thickness, tip radius, bias, and doping level. For doping profiling applications it is found that both the microwave amplitude and phase signals can be used. Under appropriate operation conditions, the phase signals can be larger by a factor of 40. Series resistances turn out to be problematic as they lead to non-monotonic contrast at low doping levels. The phase and amplitude behavior on a material system with a frequency dependent dielectric constant is also investigated and the possibilities of complex impedance spectroscopy are explored. V C 2012 American Institute of Physics. [http://dx.

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Section: Introductionsupporting

confidence: 85%

“…14 Now, we focus on the phase behavior and its comparison to the amplitude signal. The whole circuit is outlined in Fig.…”

Section: Methodsmentioning

confidence: 99%

Phase and amplitude sensitive scanning microwave microscopy/spectroscopy on metal–oxide–semiconductor systems

Humer

Huber

Kienberger

et al. 2012

Journal of Applied Physics

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“…The lateral resolution of SMM is proportional to the tip radius, and its principle has been described recently. [11][12][13] For comparison, a reference sample with a 5 nm thick partially oxidized graphene nanosheet on a platinum surface was measured.…”

Section: Methodsmentioning

confidence: 99%

Excessive grain boundary conductivity of spin-spray deposited ferrite/non-magnetic multilayer

Xing

Myers

Obi

et al. 2012

Journal of Applied Physics

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Magnetic materials with a high self-biased ferromagnetic resonance (FMR) frequency and low electrical conductivity hold great potential for RF/microwave devices. In this work, ferrite film consisting of Fe 3 O 4 (1.2 lm)/photoresist (60 nm)/Fe 3 O 4 (1.2 lm) was deposited at 90 C via spin spray deposition. Broadband impedance imaging with nanometer spatial resolution was recorded by using scanning microwave microscopy. Compared to a reference sample, it turned out that the grain boundary appeared to be more conductive than the grain.

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“…26, S 11 is sensitive to the voltage-dependent, small-signal capacitance C(V); while S 0 11 is sensitive to the slope of C(V) at the sample surface within the vicinity of the tip. 26 Fig. 1(a) shows a SEM image of a typical NW used for the measurement.…”

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confidence: 99%

Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

Imtiaz

Wallis

Weber

et al. 2014

Applied Physics Letters

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We used a broadband, atomic-force-microscope-based, scanning microwave microscope (SMM) to probe the axial dependence of the charge depletion in a p-n junction within a gallium nitride nanowire (NW). SMM enables the visualization of the p-n junction location without the need to make patterned electrical contacts to the NW. Spatially resolved measurements of S11′, which is the derivative of the RF reflection coefficient S11 with respect to voltage, varied strongly when probing axially along the NW and across the p-n junction. The axial variation in S11′ effectively mapped the asymmetric depletion arising from the doping concentrations on either side of the junction. Furthermore, variation of the probe tip voltage altered the apparent extent of features associated with the p-n junction in S11′ images.

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Scanning microwave microscopy/spectroscopy on metal-oxide-semiconductor systems

Cited by 33 publications

References 21 publications

Phase and amplitude sensitive scanning microwave microscopy/spectroscopy on metal–oxide–semiconductor systems

Phase and amplitude sensitive scanning microwave microscopy/spectroscopy on metal–oxide–semiconductor systems

Excessive grain boundary conductivity of spin-spray deposited ferrite/non-magnetic multilayer

Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

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