Scanning of irradiated silicon detectors using alpha particles and low-energy protons

Casse, G.; Doležal, Z.; Gläser, M.; Kohout, Z.; Koníček, J.; Lemeilleur, F.; Leroy, C.; Linhart, V.; Mareš, J.; Pospı́šil, S.; Roy, P.; Sopko, B.; Sinor, M.; Svejda, Jan Taro; Vorobel, V.; Wilhelm, I.

doi:10.1016/s0168-9002(99)00591-4

Cited by 9 publications

(5 citation statements)

References 2 publications

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“…The deficit increases to 30% and 35% for α-particles incident on the back side of MESA and SP detectors, respectively. These results are in good agreement with existing direct measurements ( [321,329], see also [103,104]).…”

Section: Results Of Irradiation Tests Of Planar Mesa Detectorssupporting

confidence: 93%

“…Precise spectroscopy is a powerful tool for investigating features and functionality of semiconductor detectors [319][320][321]. It provides information on the structure and charge collection capabilities of the detectors.…”

Section: Spectroscopic Characteristics Of Sp Detectorsmentioning

confidence: 99%

“…The understanding of the behaviour of these peaks is presented in [321]. The sensitivity of the spectroscopic method for SP detectors is illustrated in figure 31.…”

Section: Spectroscopic Characteristics Of Sp Detectorsmentioning

confidence: 99%

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Particle interaction and displacement damage in silicon devices operated in radiation environments

2007

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Silicon is used in radiation detectors and electronic devices. Nowadays, these devices achieving submicron technology are parts of integrated circuits of large to very large scale integration (VLSI). Silicon and silicon-based devices are commonly operated in many fields including particle physics experiments, nuclear medicine and space. Some of these fields present adverse radiation environments that may affect the operation of the devices. The particle energy deposition mechanisms by ionization and non-ionization processes are reviewed as well as the radiation-induced damage and its effect on device parameters evolution, depending on particle type, energy and fluence. The temporary or permanent damage inflicted by a single particle (single event effect) to electronic devices or integrated circuits is treated separately from the total ionizing dose (TID) effect for which the accumulated fluence causes degradation and from the displacement damage induced by the non-ionizing energy-loss (NIEL) deposition. Understanding of radiation effects on silicon devices has an impact on their design and allows the prediction of a specific device behaviour when exposed to a radiation field of interest.

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Section: Results Of Irradiation Tests Of Planar Mesa Detectorssupporting

confidence: 93%

Section: Spectroscopic Characteristics Of Sp Detectorsmentioning

confidence: 99%

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Particle interaction and displacement damage in silicon devices operated in radiation environments

2007

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“…Methods evaluating changes of global properties of single-pad silicon sensors after irradiation do not provide information on spatial uniformity e.g. [1,2]. This paper presents the possibility to visualize and determine the response mapping of silicon pixelated sensors after intentional radiation damage by energetic proton beams.…”

Section: Jinst 8 C04001mentioning

confidence: 99%

Evaluation of local radiation damage in silicon sensor via charge collection mapping with the Timepix read-out chip

Platkevič

Jakůbek

Havránek³

et al. 2013

J. Inst.

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Studies of radiation hardness of silicon sensors are standardly performed with singlepad detectors evaluating their global electrical properties. In this work we introduce a technique to visualize and determine the spatial distribution of radiation damage across the area of a semiconductor sensor. The sensor properties such as charge collection efficiency and charge diffusion were evaluated locally at many points of the sensor creating 2D maps. For this purpose we used a silicon sensor bump bonded to the pixelated Timepix read-out chip. This device, operated in Time-overthreshold (TOT) mode, allows for the direct energy measurement in each pixel. Selected regions of the sensor were intentionally damaged by defined doses (up to 10 12 particles/cm 2 ) of energetic protons (of 2.5 and 4 MeV). The extent of the damage was measured in terms of the detector response to the same ions. This procedure was performed either on-line during irradiation or off-line after it. The response of the detector to each single particle was analyzed determining the charge collection efficiency and lateral charge diffusion. We evaluated the changes of these parameters as a function of radiation dose. These features are related to the local properties such as the spatial homogeneity of the sensor. The effect of radiation damage was also independently investigated measuring local changes of signal response to γ, and X rays and alpha particles.

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“…Existing methods evaluate changes only of global properties of single-pad silicon sensors after irradiation e.g., [8][9][10], and lack any imaging or spatial information. In this paper we present a novel approach enabling three dimensional response mapping of silicon sensors which we tested with intentional radiation damage by an energetic proton beam.…”

Section: Introductionmentioning

confidence: 99%

3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

et al. 2013

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Radiation damage in semiconductor sensors alters the response and degrades the performance of many devices ultimately limiting their stability and lifetime. In semiconductor radiation detectors the homogeneity of charge collection becomes distorted while decreasing the overall detection efficiency. Moreover the damage can significantly increase the detector noise and degrade other electrical properties such as leakage current. In this work we present a novel method for 3D mapping of the semiconductor radiation sensor volume allowing displaying the three dimensional distribution of detector properties such as charge collection efficiency and charge diffusion rate. This technique can visualize the spatially localized changes of local detector performance after radiation damage. Sensors used were 300 µm and 1000 µm thick silicon bump-bonded to a Timepix readout chip which serves as an imaging multichannel microprobe (256 × 256 square pixels with pitch of 55 µm, i.e. all together 65 thousand channels). Per pixel energy sensitivity of the Timepix chip allows to evaluate the local charge collection efficiency and also the charge diffusion rate. In this work we implement an X-ray line scanning technique for systematic evaluation of changes in the performance of a silicon sensor intentionally damaged by energetic protons. KEYWORDS: Charge transport and multiplication in solid media; Radiation damage evaluation methods; Pixelated detectors and associated VLSI electronics; Radiation damage to detector materials (solid state)

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Scanning of irradiated silicon detectors using alpha particles and low-energy protons

Cited by 9 publications

References 2 publications

Particle interaction and displacement damage in silicon devices operated in radiation environments

Particle interaction and displacement damage in silicon devices operated in radiation environments

Evaluation of local radiation damage in silicon sensor via charge collection mapping with the Timepix read-out chip

3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

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