Scanning probe-based high-accuracy overlay alignment concept for lithography applications

Ishchuk, Valentyn; Guliyev, Elshad; Aydogan, Cemal; Buliev, Ivan; Kaestner, Marcus; Ivanov, Tzvetan; Ahmad, Ahmad; Reum, Alexander; Lenk, Steve; Lenk, Claudia; Nikolov, Nikolay; Glinsner, T.; Rangelow, Ivo W.

doi:10.1007/s00339-016-0681-8

Cited by 11 publications

(2 citation statements)

References 26 publications

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“…The imaging is performed routinely with atomic resolution and employed for pre-and post-inspection. This enables precise pattern overlay alignment and feature stitching 20 , as shown for a representative example in Fig. 4.…”

Section: Methodsmentioning

confidence: 99%

Field-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions

Rangelow

Lenk

Hofmann

et al. 2018

Novel Patterning Technologies 2018

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Cost-effective generation of single-digit nano-lithographic features could be the way by which novel nanoelectronic devices, as single electron transistors combined with sophisticated CMOS integrated circuits, can be obtained. The capabilities of Field-Emission Scanning Probe Lithography (FE-SPL) and reactive ion etching (RIE) at cryogenic temperature open up a route to overcome the fundamental size limitations in nanofabrication. FE-SPL employs Fowler-Nordheim electron emission from the tip of a scanning probe in ambient conditions. The energy of the emitted electrons (<100 eV) is close to the lithographically relevant chemical excitations of the resist, thus strongly reducing proximity effects. The use of active, i.e. self-sensing and self-actuated, cantilevers as probes for FE-SPL leads to several promising performance benefits. These

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Section: Methodsmentioning

confidence: 99%

Field-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions

Rangelow

Lenk

Hofmann

et al. 2018

Novel Patterning Technologies 2018

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“…Thus, it enables (i) sample inspection before patterning, (ii) AFM-based registration, stitching and overlay alignment with high accuracy (ca. 10 nm using the bottom stage [ 159 ] and ca. 1 nm using the scanner positioning, see Fig.…”

Section: Reviewmentioning

confidence: 99%

Charged particle single nanometre manufacturing

Prewett¹,

Hagen²,

Lenk³

et al. 2018

Beilstein J. Nanotechnol.

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Following a brief historical summary of the way in which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the subject of a recently completed European Union Project entitled “Single Nanometre Manufacturing: Beyond CMOS”. Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The second technology, focused electron induced processing (FEBIP), uses a nozzle-dispensed precursor gas either to etch or to deposit patterns on the nanometre scale without the need for resist. The process has potential for high throughput enhancement using multiple electron beams and a system employing up to 196 beams is under development based on a commercial SEM platform. Among its potential applications is the manufacture of templates for nanoimprint lithography, NIL. This is also a target application for the third and final charged particle technology, viz. field emission electron scanning probe lithography, FE-eSPL. This has been developed out of scanning tunneling microscopy using lower-energy electrons (tens of electronvolts rather than the tens of kiloelectronvolts of the other techniques). It has the considerable advantage of being employed without the need for a vacuum system, in ambient air and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput.

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