Scanning probe-based nanolithography: nondestructive structures fabricated on silicon surface via distinctive anisotropic etching in HF/HNO3 mixtures

Wu, Lei; Zhang, Pei; Feng, Chengqiang; Gao, Jian; Yu, Bingjun; Qian, Linmao

doi:10.1007/s10853-020-05452-2

Cited by 10 publications

(5 citation statements)

References 35 publications

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“…The 40 wt % HF solution was employed for removing the superficial oxidation layer and the a-Si layer induced by the nanoscratching. To investigate selective etching characteristics of nanoscratch-induced subsurface defects, 20 wt % KOH solution, 25 wt % TMAH solution, and a mixture of 40 wt % HF and 68 wt % HNO 3 (volume ratio = 1:60) 44 were applied to etch line-scratches produced under continuous linear application of normal load from 0 to 6 mN, the oxidation structure by the LAO, and scratches after the superficial oxidation layer and/or a-Si layer being removed. The solution temperature during the etching was strictly maintained at 25 ± 2 °C.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Toward Controllable Wet Etching of Monocrystalline Silicon: Roles of Mechanically Driven Defects

Cui

et al. 2022

ACS Appl. Mater. Interfaces

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Wet chemical etching is essential not only for processing silicon (Si) wafers but also for forming diverse structures, significantly promoting the development of the semiconductor industry. However, tight control of etched topography at the nanoscale and even atom-scale in a controllable and reproducible fashion can be hardly achieved in either laboratory research or industrial production, seriously hindering further enhancement of high-performance Si-based electronic devices. Herein, the roles of mechanically driven defects in wet etching were systematically investigated toward promoting controllable wet etching of monocrystalline Si. The role of antietching of mechanically driven amorphous Si (a-Si) and the role of promoting etching of distorted Si (including dislocations and stacking faults) were revealed in anisotropic or isotropic etchants. It was also found that the nucleation of nanocrystals in the a-Si area with increasing contact pressure can lead to deactivation of the antietching mask, and the required contact pressure for deactivation in KOH and tetramethyl ammonium hydroxide solutions was much higher than that in HF/HNO3 mixtures. The selective etching mechanisms for every defect including a-Si, distorted Si, and nanocrystals were further addressed down to the atom-scale based on the proposed dissolution model. This study provides insights into deeply understanding the role of defects in wet etching and pushes forward the idea of controllable wet chemical etching in the Si-based semiconductor industry.

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Section: ■ Experimental Sectionmentioning

confidence: 99%

Toward Controllable Wet Etching of Monocrystalline Silicon: Roles of Mechanically Driven Defects

Cui

et al. 2022

ACS Appl. Mater. Interfaces

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“…When the scratched silicon surface was etched by negative voltage, the h + inside the silicon and injected by the power source move toward the back side of the silicon (Figure 25b) [92]. Correspondingly, In addition, Wu et al [93] developed a rapid fabrication method for fabricating nondestructive structures through site-controlled formation of friction-induced hillocks followed by selective etching in HF/HNO 3 mixture. In this study, it was found that friction-induced hillocks can act as a mask against the mixtures etching, and the fabrication process was significantly affected by volume ratio of HF/HNO 3 mixture, sliding cycle, normal load, and etching time.…”

Section: Rapid Nanofabrication By Friction-induced Selective Etchingmentioning

confidence: 99%

Friction-Induced Nanofabrication: A Review

Qian

2021

Chin. J. Mech. Eng.

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As the bridge between basic principles and applications of nanotechnology, nanofabrication methods play significant role in supporting the development of nanoscale science and engineering, which is changing and improving the production and lifestyle of the human. Photo lithography and other alternative technologies, such as nanoimprinting, electron beam lithography, focused ion beam cutting, and scanning probe lithography, have brought great progress of semiconductor industry, IC manufacturing and micro/nanoelectromechanical system (MEMS/NEMS) devices. However, there remains a lot of challenges, relating to the resolution, cost, speed, and so on, in realizing high-quality products with further development of nanotechnology. None of the existing techniques can satisfy all the needs in nanoscience and nanotechnology at the same time, and it is essential to explore new nanofabrication methods. As a newly developed scanning probe microscope (SPM)-based lithography, friction-induced nanofabrication provides opportunities for maskless, flexible, low-damage, low-cost and environment-friendly processing on a wide variety of materials, including silicon, quartz, glass surfaces, and so on. It has been proved that this fabrication route provides with a broad application prospect in the fabrication of nanoimprint templates, microfluidic devices, and micro/nano optical structures. This paper hereby involved the principals and operations of friction-induced nanofabrication, including friction-induced selective etching, and the applications were reviewed as well for looking ahead at opportunities and challenges with nanotechnology development. The present review will not only enrich the knowledge in nanotribology, but also plays a positive role in promoting SPM-based nanofabrication.

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“…Power supply, signal integrity, form factor reduction, and heat dissipation issues may all be addressed using stacked Si dies [1]. Three-dimensional TSV is a popular electronic packaging technology that offers significant benefits in terms of device performance, size, and cost in 3D packaging technology [2][3][4]. As optoelectronic interconnects transition to larger bandwidth devices like those with 1.6T or greater, the necessity of improved package design has become increasingly apparent [5].…”

Section: Introductionmentioning

confidence: 99%

“…As optoelectronic interconnects transition to larger bandwidth devices like those with 1.6T or greater, the necessity of improved package design has become increasingly apparent [5]. In particular, the TSV is vital in semiconductor integration, which enables rapid signal transmission due to interconnected upper and lower-stacked Si chips [4,5]. The complementary metal-oxide semiconductor (CMOS) image sensor, dynamic random access memory, flash memory, system in package (SiP), system on chip (SoC), Internet of Things (IoT), 6G/5G networks, and high-performance computers (HPC) are various industries where TSV technology is a key player [6,7].…”

Section: Introductionmentioning

confidence: 99%

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Jang,

Sharma,

Jung

2023

Materials

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Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for achieving high-density integration, high-speed connectivity, and for downsizing of electronic devices. This paper describes recent developments in TSV fabrication and bonding methods in advanced 3D electronic packaging. In particular, the authors have overviewed the recent progress in the fabrication of TSV, various etching and functional layers, and conductive filling of TSVs, as well as bonding materials such as low-temperature nano-modified solders, transient liquid phase (TLP) bonding, Cu pillars, composite hybrids, and bump-free bonding, as well as the role of emerging high entropy alloy (HEA) solders in 3D microelectronic packaging. This paper serves as a guideline enumerating the current developments in 3D packaging that allow Si semiconductors to deliver improved performance and power efficiency.

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Scanning probe-based nanolithography: nondestructive structures fabricated on silicon surface via distinctive anisotropic etching in HF/HNO3 mixtures

Cited by 10 publications

References 35 publications

Toward Controllable Wet Etching of Monocrystalline Silicon: Roles of Mechanically Driven Defects

Toward Controllable Wet Etching of Monocrystalline Silicon: Roles of Mechanically Driven Defects

Friction-Induced Nanofabrication: A Review

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

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