Scanning probe lithography on calixarene towards single-digit nanometer fabrication

Abstract

Cost effective patterning based on scanning probe nanolithography (SPL) has the potential for electronic and optical nano-device manufacturing and other nanotechnological applications. One of the fundamental advantages of SPL is its capability for patterning and imaging employing the same probe. This is achieved with self-sensing and self-actuating cantilevers, also known as ‘active’ cantilevers. Here we used active cantilevers to demonstrate a novel path towards single digit nanoscale patterning by employing a low energy (<100 eV) electron exposure to thin films of molecular resist. By tuning the electron energies to the lithographically relevant chemical resist transformations, the interaction volumes can be highly localized. This method allows for greater control over spatially confined lithography and enhances sensitivity. We found that at low electron energies, the exposure in ambient conditions required approximately 10 electrons per single calixarene molecule to induce a crosslinking event. The sensitivity was 80-times greater than a classical electron beam exposure at 30 keV. By operating the electro-exposure process in ambient conditions a novel lithographic reaction scheme based on a direct ablation of resist material (positive tone) is presented.

Processing and Analysis of Long-Range Scans with an Atomic Force Microscope (AFM) in Combination with Nanopositioning and Nanomeasuring Technology for Defect Detection and Quality Control

“…These self-sensing and self-actuating microcantilevers can be applied to measure topography. However, it is also possible to use them for scanning probe lithography [ 6 , 7 ]. With this so-called field-emission scanning probe lithography (FESPL), structures with sizes below sub-10 nm can be generated [ 8 , 9 ].…”

Tip- and Laser-based 3D Nanofabrication in Extended Macroscopic Working Areas

“…The FESPL technique for nanofabrication is based on a Fowler-Nordheim electron emission and is capable of structuring features in the sub-10-nm range under standard conditions [30,53]. Therefore, the technique can serve as a technology for prototyping sub-10-nm high-performance electronic devices [54,55]. In this mode of operation, the distance between cantilever tip and sample is closed-loop controlled to create a constant current between the cantilever tip and the surface.…”

Canny Algorithm Enabling Precise Offline Line Edge Roughness Acquisition in High-Resolution Lithography

“…The edge roughness is influenced by not only photoresist materials but also the lithography technique. For example, in electron beam lithography (EBL), the scattering of electrons can be far beyond the initial exposure range . Rough edges can significantly affect the quality of the subsequent electronic components, so the LER/LWR is an essential parameter of photoresists. , These three parameters are often further combined into the Z -factor ( Z = R 3 × LER 2 × S ) for a quick comparison of different photoresists …”