2017
DOI: 10.1002/smtd.201700295
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Scanning Probe Microscopy Applied to Organic–Inorganic Halide Perovskite Materials and Solar Cells

Abstract: preparation can lead to a large variety of film morphologies.OHPs have impressive optoelectronic properties, ranging from high absorption coefficient and suitable bandgap for visible light, [5] low exciton binding energy, [6,7] high carrier mobility, and long carrier diffusion lengths, [8] all of which make this class of materials especially suitable for PV applications. It is of the utmost importance to understand the effect that film morphology has on these critical properties, and subsequently on standard s… Show more

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Cited by 64 publications
(63 citation statements)
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References 138 publications
(202 reference statements)
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“…Several techniques previously developed to understand the features of defects (energy levels and densities) in inorganic semiconductors were applied also in perovskites . These techniques include temperature‐dependent charge space limited current (SCLC), thermal admittance spectroscopy (TAS), deep‐level transient spectroscopy (DLTS), Laplace current DLTS (I‐DLTS), steady‐state photoluminescence (SSPL), time‐resolved photoluminescence (TRPL), PL mapping, time‐resolved microwave conductivity (TRMC), thermally stimulated current (TSC), capacitance‐frequency at different temperatures (C‐f), transient photocapacitance (TPC), surface photovoltage (SPV) spectroscopy, time‐resolved spectroscopies such as transient absorption and reflection techniques, ultraviolet photoemission spectroscopy (UPS), scanning tunneling microscopy (STM) . Comprehensive Reviews describing the working principles of techniques above and summarizing advantages and disadvantages can be found in Refs.…”
Section: Defects In Metal Halide Perovskitesmentioning
confidence: 99%
“…Several techniques previously developed to understand the features of defects (energy levels and densities) in inorganic semiconductors were applied also in perovskites . These techniques include temperature‐dependent charge space limited current (SCLC), thermal admittance spectroscopy (TAS), deep‐level transient spectroscopy (DLTS), Laplace current DLTS (I‐DLTS), steady‐state photoluminescence (SSPL), time‐resolved photoluminescence (TRPL), PL mapping, time‐resolved microwave conductivity (TRMC), thermally stimulated current (TSC), capacitance‐frequency at different temperatures (C‐f), transient photocapacitance (TPC), surface photovoltage (SPV) spectroscopy, time‐resolved spectroscopies such as transient absorption and reflection techniques, ultraviolet photoemission spectroscopy (UPS), scanning tunneling microscopy (STM) . Comprehensive Reviews describing the working principles of techniques above and summarizing advantages and disadvantages can be found in Refs.…”
Section: Defects In Metal Halide Perovskitesmentioning
confidence: 99%
“…As for C‐AFM, this technique widely used to probe the electronic properties by measuring and recording current between conductive tip and the substrate in the contact mode. Under this scenario, the conductive tip sweeps across the substrate accompanied by a constant tip‐sample interaction force . As a derivative of AFM originated from the electrical mode of scanning probe microscopy, C‐AFM with a set of current amplifiers attached to the microscope can be devoted to imagining the morphology and characterizing local electrical properties of the sample surface simultaneously at microscopic scale, even under the ambient environment .…”
Section: Introductionmentioning
confidence: 99%
“…In addition to the race for new efficiencies and finding ways to push the technology into market, a fundamental understanding of the energy conversion process within the perovskite thin films has started to develop. The latter not only provides handles to an enhanced energy conversion, but may also assist in improving the chemical and physical stability of the devices and eventually replacing the water‐soluble and ecotoxic lead‐halogen compound . To improve the understanding of light harvesting, photon‐to‐electron conversion and charge carrier transport, a detailed analysis of the microstructure and its properties is needed.…”
Section: Introductionmentioning
confidence: 99%