Epitaxial Growth of Complex Metal Oxides 2015
DOI: 10.1016/b978-1-78242-245-7.00011-7
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Scanning probe microscopy (SPM) of epitaxial oxide thin films

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“…For the epitaxial layer in the presence of a lattice mismatch between the growth layer and the substrate, a lattice mismatch ratio is commonly defined as the relative difference between the in-plane lattice constants of the growth layer and substrate. The small lattice mismatch ratio means that the lattice points of the growth layer and the substrate are in good agreement. Some studies have estimated the lattice mismatch ratio of crystalline devices having electric and optical properties using various microscopic observation techniques in the vapor epitaxial growth process. …”
Section: Introductionmentioning
confidence: 99%
“…For the epitaxial layer in the presence of a lattice mismatch between the growth layer and the substrate, a lattice mismatch ratio is commonly defined as the relative difference between the in-plane lattice constants of the growth layer and substrate. The small lattice mismatch ratio means that the lattice points of the growth layer and the substrate are in good agreement. Some studies have estimated the lattice mismatch ratio of crystalline devices having electric and optical properties using various microscopic observation techniques in the vapor epitaxial growth process. …”
Section: Introductionmentioning
confidence: 99%