1988
DOI: 10.1016/0022-0728(88)85043-5
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Scanning tunneling microscopy at potential controlled electrode surfaces in electrolytic environment

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Cited by 161 publications
(44 citation statements)
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“…In particular, in-situ scanning tunneling microscopy (STM) has brought a considerable advancement of our understanding of electrified interfaces. In this context, the pioneering work of Siegenthaler and his group [2,3] has to be emphasized that demonstrated the feasibility of electrochemical scanning tunneling microscopy (EC-STM) for the first time, and which allows the real space imaging of surfaces in contact with electrolytes and atomic resolution. By far, most of the EC-STM investigations since then have been performed under potentiostatic and equilibrium conditions.…”
mentioning
confidence: 99%
“…In particular, in-situ scanning tunneling microscopy (STM) has brought a considerable advancement of our understanding of electrified interfaces. In this context, the pioneering work of Siegenthaler and his group [2,3] has to be emphasized that demonstrated the feasibility of electrochemical scanning tunneling microscopy (EC-STM) for the first time, and which allows the real space imaging of surfaces in contact with electrolytes and atomic resolution. By far, most of the EC-STM investigations since then have been performed under potentiostatic and equilibrium conditions.…”
mentioning
confidence: 99%
“…An interface between liquid solvent and solid substrate is investigated, thus constituting a liquid-solid interface situated in an electrochemical cell [115,177,196]. By ensuring very clean experimental conditions during measurement, the tunneling conditions at the solid/liquid interface are similar to those formed under ultra-high vacuum (UHV) conditions [160, 161,162].…”
Section: Chapter 2 Electrochemistrymentioning
confidence: 99%
“…In an electrochemical environment the potential of the tip E tip as well as the potential of the substrate E WE are controlled with respect to the reference electrode RE by an appropriate bipotentiostat [41,115]. Consequently, the bias voltage of the STM setup V b is given by the difference between the potentials of both working electrodes V b = |E tip − E WE |.…”
Section: Setup Of the Ec-stmmentioning
confidence: 99%
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“…[1][2][3][4][5][6][7][8] One particularly attractive class of systems represent metal adlayers prepared by underpotential deposition (UPD). This process refers to the electrodeposition of metal monolayers on a foreign metal substrate at potentials more positive than the bulk equilibrium potential on the same metal.…”
Section: Introductionmentioning
confidence: 99%