Scanning tunneling microscopy investigation of single electron tunneling in Co–Al–O and Cu–Al–O granular films

Takanashi, Kōki; Mitani, Seiji; Chiba, J.; Fujimori, H.

doi:10.1063/1.372696

Cited by 18 publications

(17 citation statements)

References 9 publications

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“…[73,74,93,94,95,96,97,98]. The enhancement of TMR in the cotunneling regime and the oscillations of TMR as a function of the transport voltage have also been observed experimentally [38,39,99,100].…”

Section: Ferromagnetic Single-electron Transistors Based On Metallic mentioning

confidence: 61%

“…Some new features of transport characteristics appear in spin-polarized electronic transport through double-island structures [38,40,92,99,124]. A typical doubleisland device, shown schematically in Fig.…”

Section: Transport In Double-island Devicesmentioning

confidence: 99%

“…Recently, several experiments on spin-polarized transport through granular systems were reported [37,38,40,92,99].…”

Section: Slow Spin Relaxation: Spin Accumulationmentioning

confidence: 99%

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Spin effects in single-electron tunnelling

Barnaś¹,

Weymann²

2008

J. Phys.: Condens. Matter

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Abstract. An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are tunnel junctions -single-barrier planar junctions or more complex ones. In this review we present and discuss recent theoretical results on electron and spin transport through ferromagnetic mesoscopic junctions including two or more barriers. Such systems are also called ferromagnetic single-electron transistors. We start from the situation when the central part of a device has the form of a magnetic (or nonmagnetic) metallic nanoparticle. Transport characteristics reveal then single-electron charging effects, including the Coulomb staircase, Coulomb blockade, and Coulomb oscillations. Single-electron ferromagnetic transistors based on semiconductor quantum dots and large molecules (especially carbon nanotubes) are also considered. The main emphasis is placed on the spin effects due to spin-dependent tunnelling through the barriers, which gives rise to spin accumulation and tunnel magnetoresistance. Spin effects also occur in the current-voltage characteristics, (differential) conductance, shot noise, and others. Transport characteristics in the two limiting situations of weak and strong coupling are of particular interest. In the former case we distinguish between the sequential tunnelling and cotunnelling regimes. In the strong coupling regime we concentrate on the Kondo phenomenon, which in the case of transport through quantum dots or molecules leads to an enhanced conductance and to a pronounced zero-bias Kondo peak in the differential conductance.

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Section: Ferromagnetic Single-electron Transistors Based On Metallic mentioning

confidence: 61%

Section: Transport In Double-island Devicesmentioning

confidence: 99%

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Spin effects in single-electron tunnelling

Barnaś¹,

Weymann²

2008

J. Phys.: Condens. Matter

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“…Moreover, two additional features of the transport characteristics were found, whose physical mechanism and origin needs further considerations. First, the differential conductance was found to change sign periodically with increasing bias voltage [9,10]. Second, the TMR was shown to oscillate between positive and negative values with increasing bias voltage.…”

mentioning

confidence: 99%

“…Recently, transport characteristics of granular magnetic nanobridges connecting two external magnetic and/or nonmagnetic electrodes were investigated experimentally [9,10,11]. The nanobridges consisted of magnetic grains distributed in a nonconducting matrix.…”

mentioning

confidence: 99%

Negative differential conductance and magnetoresistance oscillations due to spin accumulation in ferromagnetic double-island devices

Weymann

Barnaś

2006

Phys. Rev. B

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Spin-dependent electronic transport in magnetic double-island devices is considered theoretically in the sequential tunneling regime. Electric current and tunnel magnetoresistance are analyzed as a function of the bias voltage and spin relaxation time in the islands. It is shown that the interplay of spin accumulation on the islands and charging effects leads to periodic modification of the differential conductance and tunnel magnetoresistance. For a sufficiently long spin relaxation time, the modulations are associated with periodic oscillations of the sign of both the tunnel magnetoresistance and differential conductance.

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Electrical Conductivity of Single Molecules

2006

Single Molecule Chemistry and Physics

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Scanning tunneling microscopy investigation of single electron tunneling in Co–Al–O and Cu–Al–O granular films

Cited by 18 publications

References 9 publications

Spin effects in single-electron tunnelling

Spin effects in single-electron tunnelling

Negative differential conductance and magnetoresistance oscillations due to spin accumulation in ferromagnetic double-island devices

Electrical Conductivity of Single Molecules

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