Scanning tunneling microscopy on Ga/Si(100)

Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(100)

“…Fig. 1(d) and (e) shows schematic illustrations of the atomic structure of the 2 × 3-Ga and 2 × 2-Ga surfaces, respectively [18,20]. The STM observations of clean Si, 2 × 3-Ga, and 2 × 2-Ga surfaces revealed that the terrace and step of each substrate surface differed, as shown in Fig.…”

Atomic hydrogen induced gallium nanocluster formation on the Si(1 0 0) surface

“…For higher coverages ($0.8 ML), small gallium clusters are formed [11] which is accompanied by changes in both Ga 3d and Si 2p peaks.…”

“…Various sub-half monolayer reconstructions [10] are all formed by ad-dimer rows and differ from each other in the inter-row distances which are governed by repulsive interactions between these rows [7]. Rectangular arrays of gallium clusters with a spacing of 8 Â n with n = 3, 4 or 5 were observed by STM for coverages close to 0.8 ML [6,11]. As the adjacent arrays are shifted, the (8 Â 1) diffraction pattern is observed [10].…”

Para to ortho transition of metallic dimers on Si(001)

“…All the experimental results 9,10,11,12,13,14,15,16,17,18,19,20 point to the fact that at low temperatures Al, Ga and In form 2×2 structure on the Si(001) surface at 0.5 ML coverage.…”

“…Low-energy-electron-diffraction (LEED), Auger electron spectroscopy (AES) and Scanning tunneling microscopy (STM) studies have provided much informations about the interaction of Al, Ga and In overlayers on the Si(001) surface at different coverages and at different temperatures 9,10,11,12,13,14,15,16,17,18,19,20 . Ide et al 9 observed 2×2, 2×3, 4×5, and 1×7 structures depending on the coverages less than 1 monolayer (ML) of Al on Si(001) and the substrate temperature in their LEED and AES experiments.…”