1989
DOI: 10.1103/physrevlett.63.2830
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Scanning-tunneling-microscopy studies of Ag on Si(100)-(2×1)

Abstract: The adsorption and growth of Ag on Si(lOO) at room temperature have been studied by scanning tunneling microscopy. The initial adsorption of Ag occurs at the twofold bridge site in between adjacent Si dimer rows. Ag atomic chains are formed with preferred lengths. MetalUc Ag islands form at coverages >0.5 monolayer, and develop into (111)-and (110)-oriented crystallites covering the entire surface at higher coverages.

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Cited by 77 publications
(28 citation statements)
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“…Therefore, these 0D objects can be classified as Ag dimers or monomers trapped by the C-type defects. These 0D objects were previously incorrectly classified as individual Ag adatoms on the Si(100)2×1 surface, without information about defects present on the surface before deposition [ [12][13][14]. It should be noted that during deposition the number of the stable chain terminations increased.…”
Section: Methodsmentioning
confidence: 98%
“…Therefore, these 0D objects can be classified as Ag dimers or monomers trapped by the C-type defects. These 0D objects were previously incorrectly classified as individual Ag adatoms on the Si(100)2×1 surface, without information about defects present on the surface before deposition [ [12][13][14]. It should be noted that during deposition the number of the stable chain terminations increased.…”
Section: Methodsmentioning
confidence: 98%
“…As shown by Samsavar et al [13] and Doraiswamy et al [14] the film growth takes place according to the Volmer-Weber mechanism (i.e., prompt threedimensional growth of metal nuclei), and results in the formation of very small particles with a rather broad and often not well-characterized size distribution. To control the size and size distribution of silver on top of Si several different ways like low energy ion bombardment [15] or the application of mass filters [16] have been considered.…”
Section: Introductionmentioning
confidence: 96%
“…This is partly due to the limited information on the microscopic physical processes such as adsorption, diffusion, and coalescence of Ag atoms on the Si͑001͒ surface. Experimentally, the Ag/Si͑001͒ system has been investigated by various techniques, such as Auger electron spectroscopy, 5 Rutherford-backscattering spectroscopy, 6 coaxial impact collision ion scattering spectroscopy, 7,8 high-resolution transmission-electronmicroscopy, 9 photoemission spectroscopy, [10][11][12] electron or x-ray photoelectron diffraction, 13,14 and scanning tunneling microscopy ͑STM͒, [15][16][17][18] which indicate that Ag grows on Si͑001͒ layer-by-layer up to 1 ML, followed by the formation of three-dimensional islands ͑Stranski-Krastanov mode͒. However, the structures of the two-dimensional intermediate layer formed by the Ag adsorption on Si͑001͒ are still uncertain.…”
Section: Introductionmentioning
confidence: 99%