Scanning Tunneling Spectroscopy on III–V Materials: Effects of Dimensionality, Magnetic Field, and Magnetic Impurities

Morgenstern, Markus; Wiebe, Jens; Marczinowski, Felix; Wiesendanger, R.

doi:10.1007/978-3-642-10553-1_9

Cited by 2 publications

(1 citation statement)

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“…For this reason, semiconducting materials are a particularly promising class of substrates, as their properties can easily be tuned by gate voltages or doping. In the following, the focus will be onThe (110) surfaces of III-V semiconductors like GaAs, InAs, and InSb [28] have a number of favorable properties which make them ideal model systems for the investigation of the semiconductor conduction band electron system [29] using STM experiments: they have a simple band structure with a quasi-isotropic, parabolic conduction band with a small effective electron mass. There is no intrinsic surface state which masks the 3D bulk electron system.…”

Section: Spin-sensitive Stm Studies Of Individual Magnetic Atoms In Smentioning

confidence: 99%

Atomic-Scale Spintronics

Brede

Chilian

Khajetoorians

et al. 2013

Handbook of Spintronics

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The developments of novel spintronic materials and spin-based electronic devices are hot topics of current research in materials science and solid-state physics. Both research fields could profit tremendously from atomic-scale insight into magnetic properties and spin-dependent interactions at the atomic level. Based on the development of spin-polarized scanning tunneling microscopy (SP-STM), the novel method of single-atom magnetometry has recently been established. It allows the measurement of magnetization curves and the determination of magnetic moments on an atom-by-atom basis. While the sensitivity level of single-atom magnetometry is below one Bohr magneton, it can easily be combined with the atomic-resolution imaging and manipulation capabilities of conventional STM, thereby offering a novel approach toward a rational material design based on the knowledge of the atomic-level properties and interactions within the solid state. Moreover, an atom-by-atom design and realization of all-spin logic devices has recently been demonstrated based on the combined knowledge derived from surface physics, nanoscience, and magnetism.

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Section: Spin-sensitive Stm Studies Of Individual Magnetic Atoms In Smentioning

confidence: 99%