Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices

Sverdlov, Viktor; Kosina, H.; Selberherr, S.

doi:10.1007/s10825-007-0146-6

Cited by 4 publications

(3 citation statements)

References 8 publications

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“…A possible method consists of a stochastic interpretation of the electron-potential interaction through a scattering mechanism that results in the generation of positive and negative particles [26], [27]. Here, we choose the "affinity" MC technique that has been used in the simulation of resonant tunneling diodes and nanoscale silicon transistors [28]- [30].…”

Section: Transport Model In the Boltzmann And Wigner Formalismsmentioning

confidence: 99%

Semiclassical and Quantum Transport in CNTFETs Using Monte Carlo Simulation

Nguyen

Querlioz

Galdin‐Retailleau

et al. 2011

IEEE Trans. Electron Devices

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Section: Transport Model In the Boltzmann And Wigner Formalismsmentioning

confidence: 99%

Semiclassical and Quantum Transport in CNTFETs Using Monte Carlo Simulation

Nguyen

Querlioz

Galdin‐Retailleau

et al. 2011

IEEE Trans. Electron Devices

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“…However, this method is naturally instable since it leads to an exponential growth of the absolute values of the affinities of particles. An algorithm making use of particle multiplication and recombination has been proposed to obtain convergence [41] and self-consistence with Poisson's equation has been reported using this technique [56].…”

Section: Particle Monte Carlo Solution Of Wbtementioning

confidence: 99%

Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport

et al. 2009

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In this paper, we review and extend our recent works based on the Monte Carlo method to solve the Wigner-Boltzmann transport equation and model semiconductor nanodevices. After presenting the different possible approaches to quantum mechanical modelling, the formalism and the theoretical framework are described together with the particle Monte Carlo implementation using a technique fully compatible with semiclassical simulation. Examples are given to highlight the importance of considering both quantum and scattering effects in nanodevices operating at room temperature, such as resonant tunnelling diode (RTD), double-gate MOSFET and carbon nanotube FET. Quantum and semiclassical approaches are compared for transistor simulation. Finally, the phonon-induced electron decoherence in RTD and MOSFET is examined through the analysis of the density matrix elements computed from the Wigner function. This formalism is shown to be relevant for the quantitative analysis of devices operating in mixed quantum/semiclassical regime and to understand the transition between both regimes or between coherent and sequential tunnelling processes.

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“…Beyond the direct numerical solution of the WignerBoltzmann transport equation [19][20][21][22][23][24], a possible particle Monte Carlo method consists in a stochastic interpretation of the electron-potential interaction through a scattering mechanism which results in the generation of "positive" and "negative" particles [17,25,26]. Here we focus on the "affinity" Monte Carlo technique that has been used in the simulation of resonant tunneling diodes and silicon nanoscaled transistors [27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Implementation of the Wigner-Boltzmann transport equation within particle Monte Carlo simulation

2010

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In this paper, we detail the main numerical issues of the Monte Carlo method developed to solve the WignerBoltzmann transport equation and simulate the quantum transport in semiconductor nanodevices. In particular, we focus on the boundary conditions regarding the injection of particles and the limits of integration for the calculation of the Wigner potential which are of crucial importance for the physical correctness of simulation results. Through typical examples we show that this model is able to treat correctly purely quantum coherent and semi-classical transport situations as well. It is finally shown that to investigate devices operating in mixed quantum/semi-classical regimes and to analyze the transition between both regimes, this approach takes advantage of its full compatibility with Boltzmann algorithm.

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Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices

Cited by 4 publications

References 8 publications

Semiclassical and Quantum Transport in CNTFETs Using Monte Carlo Simulation

Semiclassical and Quantum Transport in CNTFETs Using Monte Carlo Simulation

Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport

Implementation of the Wigner-Boltzmann transport equation within particle Monte Carlo simulation

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