Scattering techniques for structural analysis of biomaterials

Murthy, N. Sanjeeva

doi:10.1533/9780857093684.34

Cited by 6 publications

(3 citation statements)

References 48 publications

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“…The crystallization of the sample is considered good since the samples has highest and strongest peak of intensity. Besides, the full width at half-maximum is symmetrical narrow which is a proof of good crystallization [17] and [28]. UV Vis.…”

Section: Methodsmentioning

confidence: 84%

Characterization of GO Added ZnO Crystal Growth Using Electric Current Heating Method

Sutjipto,

Legowo

2024

JMNM

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ZnO has attractive and great properties especially in the fields of photonics, electronics and optics and it is widely used in the manufacturing industry of photodetectors, laser diodes and gas detectors. Therefore, various methods have been carried out to produce ZnO crystals and one of them is the Electric Current Heating method. Electric Current Heating (ECH) method is a fabrication technique applied in researches to grow ZnO crystal on a ceramic bar. This method is preferred because of it is easy to operate in laboratory, low growth temperature and also low cost. In this research, by using powder metallurgy process, Graphene Oxide/GO (in various weight percentage) added into ZnO was pelletized in a compaction die with dimension of 14.95 mm x 30 mm x 40 mm and pressure of 4 bar. The pellet green body was then sintered at 1100 °C with rate 10.0 °C/min for 3 hours. The sintered GO added ZnO ceramic was cut into ceramic bar with dimensio of 13mm x 2mm x 2mm. ECH with current 3 A and applied voltage of 30 V was used to heat the ceramic bar to produce crystals. Under scanning electron observation, it was found different crystal-like structures for each percentage GO addition. UV-Vis measurement has shown that each crystal-like structure of a GO added ZnO has own degree of energy absorbsion because of different band gap. Addition GO into ZnO would increase band gap of pure ZnO.

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Section: Methodsmentioning

confidence: 84%

Characterization of GO Added ZnO Crystal Growth Using Electric Current Heating Method

Sutjipto,

Legowo

2024

JMNM

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“…Larger grains lead to larger grain boundary gaps that decrease the permselectivity by allowing all molecules to pass through. Additionally, larger grain sizes make the material brittle, thus the membrane becomes more prone to deformation [ 49 – 51 ]. Therefore, it can be expected to achieve a better stability and H 2 permselectivity with surfaces prepared using baths at 40 and 30 °C, disregarding the surface defects/cracks on sample prepared at 40 °C.…”

Section: Resultsmentioning

confidence: 99%

Optimized intermediate layer formation and electroless plating methods to obtain supported dense Pd surfaces

GÜR,

TOPRAK

2024

Turkish Journal of Chemistry

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Dense metallic membranes, especially Pd and Pd alloys, have been intensely investigated to provide an alternative and economical way to obtain H 2 with ultrahigh purity. To overcome the high cost of Pd, composite membrane structures that comprise a thin layer of Pd are utilized. However, it is a challenge to obtain a thin, dense, and uniform Pd layer on the support materials. This study investigates the parametric analysis of γ-Al 2 O 3 interlayer formation and the electroless Pd plating (Pd ELP) procedures on α-Al 2 O 3 supports with the aim to achieve a thin, uniform Pd surface without annealing. Adjustments in PEG/PVA concentration, dipping time, and heat treatment enabled creating a thin γ-Al 2 O 3 interlayer on α-Al 2 O 3 , minimizing pore size and density. Hydrazine concentration, heat treatment, and bath temperature were adjusted to optimize Pd ELP to achieve maximum yield from the plating bath and a dense, uniform surface without annealing. Pd/γ-Al 2 O 3 /α-Al 2 O 3 structures were analyzed using scanning electron microscopy, X-ray diffraction, and thermogravimetric analysis to observe the impact of varied parameters on surface structures. Optimized sample was compared to an annealed Pd/α-Al 2 O 3 prepared in accordance with literature methods and a Pd/graphite/α-Al 2 O 3 sample to validate the use of optimized ELP procedure and the γ-Al 2 O 3 interlayer. Results show that a dense and uniform 13 μm Pd coating was achieved on a γ-Al 2 O 3 -coated α-Al 2 O 3 support without annealing, using three fresh ELP baths. This was done using sequential hydrazine addition with a decreased concentration (1 M) into the ELP baths at 30 °C, and applying heat treatment at 120 °C between each fresh ELP bath.

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“…Meanwhile, there was no change in the crystallite size at all. The size of the crystallites is typically considered to be a significant parameter, as the sizes of the crystals determine whether the material is soft (small crystallites) or brittle (big crystallites) [26]. In addition, the lattice strain increases as the size of the crystallite increases.…”

Section: Resultsmentioning

confidence: 99%

Magnetron Sputtered Al Co-Doped with Zr-Fe2O3 Photoanode with Fortuitous Al2O3 Passivation Layer to Lower the Onset Potential for Photoelectrochemical Solar Water Splitting

et al. 2022

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In this paper, we investigate the magnetron sputtering deposition of an Al-layer on Zr-doped FeOOH (Zr-FeOOH) samples to fabricate a Zr/Al co-doped Fe2O3 (Al-Zr/HT) photoanode. An Al-layer is deposited onto Zr-FeOOH through magnetron sputtering and the thickness of the Al deposition is regulated by differing the sputtering time. Electrochemical impedance spectroscopy, intensity-modulated photocurrent spectroscopy, Mott-Schottky and time-resolved photoluminescence spectra analyses were used to study, in depth, the correlations between sputtered Al-layer thicknesses and PEC characteristics. High-temperature quenching (800 °C) assists in diffusing the Al3+ in the bulk of the Zr-doped Fe2O3 photoanode, whilst an unintended Al2O3 passivation layer forms on the surface. The optimized Al-Zr/HT photoelectrode achieved 0.945 mA/cm2 at 1.0 VRHE, which is 3-fold higher than that of the bare Zr/HT photoanode. The Al2O3 passivation layer causes a 100 mV cathodic shift in the onset potential. Al co-doping improved the donor density, thus reducing the electron transit time. In addition, the passivation effect of the Al2O3 layer ameliorated the surface charge transfer kinetics. The Al2O3 passivation layer suppressed the surface charge transfer resistance, consequently expediting the hole migration from photoanode to electrolyte. We believe that the thickness-controlled Al-layer sputtering approach could be applicable for various metal oxide photoanodes to lower the onset potential.

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Scattering techniques for structural analysis of biomaterials

Cited by 6 publications

References 48 publications

Characterization of GO Added ZnO Crystal Growth Using Electric Current Heating Method

Characterization of GO Added ZnO Crystal Growth Using Electric Current Heating Method

Optimized intermediate layer formation and electroless plating methods to obtain supported dense Pd surfaces

Magnetron Sputtered Al Co-Doped with Zr-Fe2O3 Photoanode with Fortuitous Al2O3 Passivation Layer to Lower the Onset Potential for Photoelectrochemical Solar Water Splitting

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