Schematic design of HF and UHF op-amp for SiGe technology

Abstract

On the basis of functional-topological principles of self-compensation and cancellation of field-effect and bipolar transistors small-signal parameters influence a set of MOS dynamic loads and single-stage op-amp circuits have been proposed. A distinctive feature of the circuits is the equality of p-MOS and n-p-n heterojunction transistors contributions. Results of op-amp modeling on technical process TSMC 0.18 um basis have been presented. The advantages of proposed solutions have been shown.