2023
DOI: 10.1039/d2nr05937a
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Schottky barrier effect on plasmon-induced charge transfer

Abstract: Plasmon-induced charge transfer causes the electron-hole spatial separation at the metal-semiconductor interface, which plays a key role in photocatalytic and photovoltaic applications. The Schottky barrier formed at the metal-semiconductor interface...

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Cited by 7 publications
(3 citation statements)
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References 59 publications
(87 reference statements)
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“…15 Upon the incorporation of a metal cocatalyst, the Schottky barrier developed at the interface between the metal and the flexoelectric semiconductor can obstruct the recombination of electrons and holes, thus elevating catalytic efficiency. 16 Therefore, metal-flexoelectric semiconductor Schottky junctions can be strategically devised for the dissociation of water in the tumor interstitium, further aiding in the reduction of TIFP. Furthermore, the ROS produced by flexocatalyzed water-splitting can induce mitochondrial dysfunction and oxidative stress.…”
Section: Introductionmentioning
confidence: 99%
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“…15 Upon the incorporation of a metal cocatalyst, the Schottky barrier developed at the interface between the metal and the flexoelectric semiconductor can obstruct the recombination of electrons and holes, thus elevating catalytic efficiency. 16 Therefore, metal-flexoelectric semiconductor Schottky junctions can be strategically devised for the dissociation of water in the tumor interstitium, further aiding in the reduction of TIFP. Furthermore, the ROS produced by flexocatalyzed water-splitting can induce mitochondrial dysfunction and oxidative stress.…”
Section: Introductionmentioning
confidence: 99%
“…Based on the band theory of flexocatalysis, flexoelectric semiconductors can generate deformation gradients and undergo polarization under ultrasonic conditions, creating an inherent electric field. , The flexoelectric potential can serve as a substantial driving force, fostering the transfer of acoustically generated charge, facilitating the separation of electrons and electron holes, and subsequently initiating redox reactions . Upon the incorporation of a metal cocatalyst, the Schottky barrier developed at the interface between the metal and the flexoelectric semiconductor can obstruct the recombination of electrons and holes, thus elevating catalytic efficiency . Therefore, metal-flexoelectric semiconductor Schottky junctions can be strategically devised for the dissociation of water in the tumor interstitium, further aiding in the reduction of TIFP.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the effective use of electromagnetic waves is one of the key factors that dominate modern warfare. [7][8][9] Electromagnetic wave absorbing materials are of great signicance for human protection and for improving the survivability and antistrike capability of weapon systems. 10 Developing new electromagnetic wave absorption materials with a thin thickness, light weight, wide frequency band, and multiple functions to meet the development needs of electromagnetic wave pollution protection and military has become an important issue of increasing concern.…”
Section: Introductionmentioning
confidence: 99%