Schottky barrier formation at the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Fe</mml:mi><mml:mo>/</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>(001) interface: Influence of oxygen vacancies and layer oxidation

Arras, Rémi; Gosteau, J.; Tricot, Sylvain; Schieffer, Philippe

doi:10.1103/physrevb.102.205307

Cited by 4 publications

(3 citation statements)

References 75 publications

(113 reference statements)

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“…We note that the actual STO bandgap likely depends on the V O concentration. [19,20] A comparison of the interface formation scenarios as determined from the XPS analysis is sketched in Figure 4a. Qualitatively, the Fermi level shifts away from the CB toward the VB for Fe/STO and FeO/STO, whereas it moves toward or possibly into the CB at the Fe 3 O 4 /STO interface.…”

Section: Band Alignment At Fe-srtio 3 Interfacesmentioning

confidence: 99%

Tunable 2D Electron‐ and 2D Hole States Observed at Fe/SrTiO₃ Interfaces

Düring,

Rosenberger,

Baumgarten

et al. 2024

Advanced Materials

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Oxide electronics provide the key concepts and materials for enhancing silicon‐based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic counterparts: the ability to set or even switch between two types of carriers ‐ either negatively (n) charged electrons or positively (p) charged holes. Here, we provide direct evidence for individually emerging n‐ or p‐type 2D band dispersions in STO‐based heterostructures using resonant photoelectron spectroscopy. The key to tuning the carrier character is the oxidation state of an adjacent Fe‐based interface layer: For Fe and FeO, hole bands emerge in the empty band gap region of STO due to hybridization of Ti‐ and Fe‐ derived states across the interface, while for Fe3O4 overlayers, an 2D electron system is formed. Unexpected oxygen vacancy characteristics arise for the hole‐type interfaces, which as of yet had been exclusively assigned to the emergence of 2DESs. In general, this finding opens up the possibility to straightforwardly switch the type of conductivity at STO interfaces by the oxidation state of a redox overlayer. This will extend the spectrum of phenomena in oxide electronics, including the realization of combined n/p‐type all‐oxide transistors or logic gates.This article is protected by copyright. All rights reserved

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Section: Band Alignment At Fe-srtio 3 Interfacesmentioning

confidence: 99%

Tunable 2D Electron‐ and 2D Hole States Observed at Fe/SrTiO₃ Interfaces

Düring,

Rosenberger,

Baumgarten

et al. 2024

Advanced Materials

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“…Such a treatment of the bcc metal has been done in calculations of the SrTiO 3 (STO)/Fe interface and the structure is reported to be energetically stable. 29) However, the structures of some elements differ significantly from the bulk crystal structure because the lateral lattice constants of the metal are matched to BTO.…”

Section: Details Of the Calculationsmentioning

confidence: 99%

First-principles calculations of Schottky barrier height at barium titanate/metal interface

Suemasa

Sakai

Araki

et al. 2022

Jpn. J. Appl. Phys.

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The Schottky barrier (SB) height at insulator/metal interfaces is important for a wide variety of electronic devices. We performed first-principles analysis of the SB formed between BaTiO3 (BTO) and metals with a cubic crystal structure. We found that the barrier height strongly depends on the contact metal and the BTO termination surface. These results were quantitatively understood by analyzing the contributions of the atomic and charge rearrangement at the interfaces. It was also found that when a different metal is substituted for one of the monoatomic Ni layers at the BTO/Ni interface, the SB is significantly influenced by the nature of the substituting metal.

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“…However, this may rely on the assistance of surface treatment. By now, existing surface treatment ways, like chemical treating, annealing, doping, and laser treating, all work well − but are not that qualified for this target. So, a direct, repeatable, and simplified way to get such novel 2DEG directly still remains as a challenge.…”

Section: Introductionmentioning

confidence: 99%

Novel 2DEG System at the HfO₂/STO Interface

Yin,

Zhu,

Wang

et al. 2024

ACS Appl. Mater. Interfaces

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Multifunctional integration in a single device has always been a hot research topic, especially for contradictory phenomena, one of which is the coexistence of ferroelectricity and metallicity. The complex oxide heterostructures, as symmetric breaking systems, provide a great possibility to incorporate different properties. Moreover, finding a series of oxide heterostructures to achieve this goal remains as a challenge. Here, taking the advantage of different physical phenomena, we use H 2 plasma to pretreat the SrTiO 3 (STO) substrate and then fabricate HfO 2 /STO heterostructures with it. The novel, well-repeatable metallic two-dimensional electron gas (2DEG) is directly obtained at the heterointerfaces without any further complex procedures, while the obvious ferroelectric-like behavior and Rashba spin−orbit coupling are also observed. The understanding of the mechanism, as well as the modified facile preparation procedure, would be meaningful for further development of ferroelectric metal in complex oxide heterostructures.

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Schottky barrier formation at theFe/SrTiO3(001) interface: Influence of oxygen vacancies and layer oxidation

Cited by 4 publications

References 75 publications

Tunable 2D Electron‐ and 2D Hole States Observed at Fe/SrTiO₃ Interfaces

Tunable 2D Electron‐ and 2D Hole States Observed at Fe/SrTiO₃ Interfaces

First-principles calculations of Schottky barrier height at barium titanate/metal interface

Novel 2DEG System at the HfO₂/STO Interface

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Schottky barrier formation at theFe/SrTiO3(001) interface: Influence of oxygen vacancies and layer oxidation

Cited by 4 publications

References 75 publications

Tunable 2D Electron‐ and 2D Hole States Observed at Fe/SrTiO3 Interfaces

Tunable 2D Electron‐ and 2D Hole States Observed at Fe/SrTiO3 Interfaces

First-principles calculations of Schottky barrier height at barium titanate/metal interface

Novel 2DEG System at the HfO2/STO Interface

Contact Info

Product

Resources

About

Tunable 2D Electron‐ and 2D Hole States Observed at Fe/SrTiO₃ Interfaces

Tunable 2D Electron‐ and 2D Hole States Observed at Fe/SrTiO₃ Interfaces

Novel 2DEG System at the HfO₂/STO Interface