Schottky Barrier Height at TiN/HfO₂ Interface of TiN/HfO₂/SiO₂/Si Structure

Abstract

Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack is investigated by x-ray photoelectron spectroscopy (XPS). The p-type Schottky barrier height (p-SBH) is found to increase with thicker HfO2 thickness. Since considering only the metal/dielectric interface cannot explain this phenomenon, band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack is demonstrated based on band alignment of entire gate stack. Dependence of p-SBH on HfO2 thickness is interpreted and contributed to fixed charges in gate stack, interfacial gap state charges at HfO2/SiO2 interface, and space charges in Si substrate. Electrical measurements of capacitor structures further support XPS results and corresponding explanation.

Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAM

“…The hopping distances are well in the same range as reported for the HfO 2 /TiN interface. 28 3.3. Synaptic Simulation.…”

“…By substituting the obtained slope values from the fitted curve shown in Figure e in eq , we obtain the hopping distances are 0.48 and 0.50 nm at negative and positive biases, respectively, which is slightly higher than the values for the pure HfO 2 -based sample shown in Figure S8d which are 0.41 and 0.45 nm, respectively. The hopping distances are well in the same range as reported for the HfO 2 /TiN interface …”

Mechanistic Studies on the Carboxylation of Hafnocene and ansa-Zirconocene Dinitrogen Complexes with CO2

“…The hybrid density functional method is reliable and was used in our previous papers. 14,15 The effective core potential of Hay and Wadt with a double-ζ valence basis set (LANL2DZ) was chosen to describe Hf and Zr. The 6-31G* basis set was used for all other atoms.…”