Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Al-Ahmadi, Noorah Ahmed

doi:10.1016/j.heliyon.2020.e04852

Cited by 15 publications

(3 citation statements)

References 35 publications

(64 reference statements)

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“…These changes can be explained by an inhomogeneous barrier. The cause of this inhomogeneity can be attributed to different atomic phases, surface defects or the influence of the interface [29]. When the Co/eosin-y/n-Si/Al and Co/eosin-y/p-Si/Al device barrier height values are compared, the Co/hematoxylin/p-Si device has lower barrier height values for the same temperature.…”

Section: Resultsmentioning

confidence: 99%

Schottky barrier engineering in metal/semiconductor structures for high thermal stability

Erdoğan¹,

Yılmaz²,

Aydoğan³

et al. 2021

Semicond. Sci. Technol.

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In this study, Co/eosin-y/p-Si/Al and Co/eosin-y/n-Si/Al heterojunctions with Schottky barrier were produced and electrical characteristics were investigated in the temperature range 100-460 K at intervals of 20 K. For each device, the barrier heights (ϕ b ), ideality factors (n) and series resistance (Rs) values were calculated using different methods from the current-voltage curves. It was observed that the ideality factor and series resistance increased with decreasing temperature, while the height of the barrier decreased. One of the reasons for this change in parameters is the inhomogeneity of the Schottky barrier. The Rs values were found with the help of Cheung functions and Norde functions. The contact parameters obtained from the Cheung functions and those obtained from the Norde function were compared. It was observed that the barrier heights obtained from these methods increased linearly with increasing temperature values. The variation of temperature-dependent interfacial state density versus interfacial state energy was shown. The density of the interfacial state decreased, with increasing interfacial state energy at each temperature value. These characteristics indicate that Co/eosin-y/p-Si/Al and Co/eosin-y/n-Si/Al devices are good candidates for rectifying and thermal sensing applications.

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Section: Resultsmentioning

confidence: 99%

Schottky barrier engineering in metal/semiconductor structures for high thermal stability

Erdoğan¹,

Yılmaz²,

Aydoğan³

et al. 2021

Semicond. Sci. Technol.

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“…As a result of the different doping methods used, some practical PSCs can be either p-type or n-type PSCs, e.g., zinc oxide (ZnO), while some practical PSCs can only be n-type PSCs, e.g., gallium nitride (GaN). When an n-type PSC and metal are bonded together, a Schottky junction appears inevitably at the interface between these two bonded solids [14,15]. Compared with the physical properties of the bulk material, the Schottky junction often has special physical properties.…”

Section: Introductionmentioning

confidence: 99%

Influence of the Schottky Junction on the Propagation Characteristics of Shear Horizontal Waves in a Piezoelectric Semiconductor Semi-Infinite Medium

Guo,

Wang,

et al. 2024

Mathematics

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In this paper, a theoretical model of the propagation of a shear horizontal wave in a piezoelectric semiconductor semi-infinite medium is established using the optimized spectral method. First, the basic equations of the piezoelectric semiconductor semi-infinite medium are derived with the consideration of biased electric fields. Then, considering the propagation of a shear horizontal wave in the piezoelectric semiconductor semi-infinite medium, two equivalent mathematical models are established. In the first mathematical model, the Schottky junction is theoretically treated as an electrically imperfect interface, and an interface characteristic length is utilized to describe the interface effect of the Schottky junction. To legitimately confirm the interface characteristic length, a second mathematical model is established, in which the Schottky junction is theoretically treated as an electrical gradient layer. Finally, the dispersion and attenuation curves of shear horizontal waves are numerically calculated using these two mathematical models to discuss the influence of the Schottky junction on the dispersion and attenuation characteristics of shear horizontal waves. Utilizing the equivalence of these two mathematical models and the above numerical results, the numerical value of the interface characteristic length is reliably legitimately confirmed; this value is independent of the thickness of the upper metal layer, the doping concentration of the lower n-type piezoelectric semiconductor substrate, and biasing electric fields. Only the biasing electric field parallel to the Schottky junction can provide an evident influence on the attenuation characteristics of shear horizontal waves and enhance the interface effect of the Schottky junction. Since the second mathematical model is also a validation of our previous mathematical model established through the state transfer equation method, some numerical results calculated using these two mathematical models are compared with those obtained using the previous method to verify the correctness and superiority of the research work presented in this paper. Since these two mathematical models can better calculate the dispersion and attenuation curves of high-frequency waves in micro- and nano-scale piezoelectric semiconductor materials, the establishment of mathematical models and the revelation of physical mechanisms are fundamental to the analysis and optimization of micro-scale resonators, energy harvesters, and amplifications.

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“…Özdemir et al [21] demonstrated that the potential barrier with GaAs decreases with the increase of the thickness of the Schottky. The semiconductor thickness also has an effect on the Schottky diode characteristics and performance [22]. Kraya and Kraya studied the effect of the contact size on the formation of the Schottky barrier and found that the bigger the size the more likely a Schottky contact is obtained [23].…”

Section: Introductionmentioning

confidence: 99%

Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes

Lakhdari¹,

Sengouga²,

Labed³

et al. 2022

Semicond. Sci. Technol.

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Schottky diodes based on Be-doped p-type AlGaAs were grown by molecular beam epitaxy (MBE) and their current-voltage (I-V) and capacitance-voltage (C-V) characteristics measured. The Schottky and Ohmic contacts are Ti/Au and Au/Ni/Au, respectively. The effect of the Schottky contact diameter on I-V and C-V characteristics was studied. To elucidate this effect, the Schottky diode figures of merits and interface states are extracted from I-V and C-V characteristics, respectively. It was found that interface states density increases with increasing Schottky contact diameter then saturates beyond 400 µm. The frequency dependence of the C-V characteristics was also related to these interface states. The results of this present study can help choosing the right Schottky contact dimensions.

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Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Cited by 15 publications

References 35 publications

Schottky barrier engineering in metal/semiconductor structures for high thermal stability

Schottky barrier engineering in metal/semiconductor structures for high thermal stability

Influence of the Schottky Junction on the Propagation Characteristics of Shear Horizontal Waves in a Piezoelectric Semiconductor Semi-Infinite Medium

Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes

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