Schottky barrier memory based on heterojunction bandgap engineering for high-density and low-power retention
Hyangwoo Kim,
Yijoon Kim,
Kyounghwan Oh
et al.
Abstract:Dynamic random-access memory (DRAM) has been scaled down to meet high-density, high-speed, and low-power memory requirements. However, conventional DRAM has limitations in achieving memory reliability, especially sufficient capacitance to distinguish memory states. While there have been attempts to enhance capacitor technology, these solutions increase manufacturing cost and complexity. Additionally, Silicon-based capacitorless memories have been reported, but they still suffer from serious difficulties regard… Show more
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