Schottky barrier restricted AlGaAs laser with an etched mesa ohmic contact

Abstract

A gain-guided AlGaAs double heterostructure laser which employs a Schottky barrier in conjunction with a p-GaAs etched mesa contact for current isolation has been fabricated. This Schottky barrier restricted structure provides a device whose electrical and optical characteristics are comparable to that of other gain-guided lasers and which is simple to fabricate. Preliminary aging data indicate high reliability of the Schottky barrier restriction.