Schottky-Barrier S/D MOSFETs With High-<tex>$Kappa$</tex>Gate Dielectrics and Metal-Gate Electrode

A novel self-aligned process for platinum silicide nanowires

“…However, accompanying the integration of a nanowire into the device channel, a giant series source/drain resistance may arise governing the transistor operation. One possible way to overcome this problem is to use the Schottky barrier source/drain (SB) structure [3], i.e., to replace the nanowires linking the channel region to the source/drain terminals with metal silicide nanowires through a self-aligned process. The Schottky junction to the channel should possess a low energy barrier in order to obtain a high drive current and, at the same time, a low junction leakage current.…”

Schottky-Barrier Height Lowering by an Increase of the Substrate Doping in PtSi Schottky Barrier Source/Drain FETs

“…S CHOTTKY-barrier source/drain (S/D) field-effect transistors (SBFETs) are promising substitutes for conventional doped S/D MOSFETs for sub-22-nm CMOS technology since silicide S/D can provide abrupt junctions with low series resistance [1]- [4]. PtSi/YbSi 1+x are considered to be among the best silicide materials for p-/n-SBFET application, but their relative low hole/electron Schottky barrier height (SBH) of ∼220 meV still limits drastically the drive current [2]- [4].…”

“…PtSi/YbSi 1+x are considered to be among the best silicide materials for p-/n-SBFET application, but their relative low hole/electron Schottky barrier height (SBH) of ∼220 meV still limits drastically the drive current [2]- [4]. To make the SBFETs comparable to state-of-the-art short-channel MOSFETs in terms of drivability, the intrinsic SBH should be lowered to ∼100 meV [3].…”

Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi Source/Drain SBFETs

“…Silicide source/drain (S/D) Schottky barrier field-effect transistors (SBFETs) are promising candidates for sub-32nm CMOS technology [1][2][3][4], as the silicide S/D can provide abrupt junctions together with lower serial resistance as compared to conventional doped S/D junctions. One of the key challenges in SBFETs is to obtain a low Schottky barrier height (SBH) at the silicide-channel junction [2]- [3].…”

“…One of the key challenges in SBFETs is to obtain a low Schottky barrier height (SBH) at the silicide-channel junction [2]- [3]. PtSi/YbSi 1+x were considered to be among the best silicide materials for p-/ n-SBFETs application, due to their relative low hole/ electron SBH [4].…”