2014
DOI: 10.1007/s10853-014-8041-6
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Schottky barrier versus surface ferroelectric depolarization at Cu/Pb(Zr, Ti)O3 interfaces

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Cited by 22 publications
(42 citation statements)
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“…Introducing usual values for high quality crystalline ferroelectric thin films of lead zirco-titanate (PZT) 11 , P ⊥ ≈ 0.4 C/m 2 , δ ≈ 3 nm, and ∈ r ≈ 180, this yields a band bending of 0.76 eV (These values, estimated one decade ago will be re-evaluated later for the actual samples.). Recently, band bendings even larger (in the range of 1 eV) were reported for pulsed laser deposited PZT 12 13 , consistent with a higher value of the polarization 17 , approaching 1 C/m 2 . Another approach is to attribute the origin of compensating charges to adsorbates or ionic surface reconstructions, a passivation mechanism found more stable thermodynamically than the compensation by mobile carriers 16 18 .…”
supporting
confidence: 59%
See 1 more Smart Citation
“…Introducing usual values for high quality crystalline ferroelectric thin films of lead zirco-titanate (PZT) 11 , P ⊥ ≈ 0.4 C/m 2 , δ ≈ 3 nm, and ∈ r ≈ 180, this yields a band bending of 0.76 eV (These values, estimated one decade ago will be re-evaluated later for the actual samples.). Recently, band bendings even larger (in the range of 1 eV) were reported for pulsed laser deposited PZT 12 13 , consistent with a higher value of the polarization 17 , approaching 1 C/m 2 . Another approach is to attribute the origin of compensating charges to adsorbates or ionic surface reconstructions, a passivation mechanism found more stable thermodynamically than the compensation by mobile carriers 16 18 .…”
supporting
confidence: 59%
“…insulating and insulated from ground) layer with no contaminants is possible only via the formation of ferroelectric (mostly 180°) domains, otherwise the depolarization field due to bound charges, oriented anti-parallel to the polarization, is sufficient to destroy the polarized state 9 . However, single domain ferroelectric ultrathin layers are routinely synthesized nowadays, using advanced deposition techniques, such as pulsed laser deposition (PLD) 8 10 11 12 13 , up to thicknesses of three lattice constants (about 1.2 nm 14 15 ). This is due to the presence of some other charges in the system, able to compensate the depolarization field.…”
mentioning
confidence: 99%
“…The PZT and reduced PZT powders were further analyzed by operando X‐ray photoelectron spectroscopy (XPS) as shown in Figure d,e. The peak at around 137.6 eV (Figure d) could be attributed to the binding energies of the Pb 2+ 4f 7/2 of PZT . After reacted with Li, two new types of chemical environment could be observed (Figure d).…”
Section: Resultsmentioning
confidence: 98%
“…Use of these materials as gatecontrol layers and data retention components in high-density memory architectures is an on-going interest. [1][2][3][4][5][6] The presence of FE polarization alters the classical characteristics of film-electrode junctions in an otherwise linear dielectric semiconductor, making polarization manipulation of carriers possible [6][7][8][9] but at the expense of potential leakage currents. [10][11][12][13][14][15] For this very reason, electrical and polarization boundary conditions (BCs) at the film-electrode interface become crucially important parameters that determine the functionality of these systems almost regardless of film thickness.…”
mentioning
confidence: 99%