2020
DOI: 10.1109/tcsii.2020.2977076
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Schottky Diode Large-Signal Equivalent-Circuit Parameters Extraction for High-Efficiency Microwave Rectifying Circuit Design

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Cited by 23 publications
(12 citation statements)
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“…Figure 7 shows the structure of the proposed parallel rectifier, which is designed on the basis of HSMS-282B Schottky diode. 32 The equivalent-circuit model and parameters of HSMS-282B are shown in Figure 8. 33 The reverse breakdown voltage of the diode is up to 16 V, such that a single diode can meet the input power requirement of 22 dBm.…”
Section: Receiving Antenna Array and Rectifiersmentioning
confidence: 99%
See 1 more Smart Citation
“…Figure 7 shows the structure of the proposed parallel rectifier, which is designed on the basis of HSMS-282B Schottky diode. 32 The equivalent-circuit model and parameters of HSMS-282B are shown in Figure 8. 33 The reverse breakdown voltage of the diode is up to 16 V, such that a single diode can meet the input power requirement of 22 dBm.…”
Section: Receiving Antenna Array and Rectifiersmentioning
confidence: 99%
“…The measured gain is 11.5 dBi at 5.8 GHz, and the radiating efficiency is 87%. Figure 7 shows the structure of the proposed parallel rectifier, which is designed on the basis of HSMS‐282B Schottky diode 32 . The equivalent‐circuit model and parameters of HSMS‐282B are shown in Figure 8 33 .…”
Section: Mwpt Systemmentioning
confidence: 99%
“…13. The circuit consists of the Schottky diode MA4E1317 (including parasitic values taken from [61], [62]) with its anode connected to a grounded stub of length λ/12, and the cathode connected to an open stub parallel to a transmission line of length λ/8. This network is connected to the circuit consisting of the low pass filter and the impedance matching network.…”
Section: Rectifier Circuit Designmentioning
confidence: 99%
“…Two techniques are widely used for diode modeling, the table-based model [10], [11] and the equivalent circuit model [12]- [14]. In the table-based approach, the diode is represented using S-parameter data taken at various bias voltages.…”
Section: Introductionmentioning
confidence: 99%