Schottky diode on Silicon Carbide (SiC): ideal detector for very wide temperature range sensors

Abstract

An analysis of wide-range temperature sensors based on Silicon Carbide (SiC) Schottky diodes, with Ni and Ti contacts, is presented in the paper. The impact of Schottky contact inhomogeneity on sensing performances is thoroughly analyzed. Sample diodes are parameterized using our recently developed model, focusing on evincing practical device performances. Electrical behavior of the structures can thus be accurately modeled over wide temperature ranges using only a minimal set of parameters. Based on the evaluated diodes’ performances, architectures for temperature sensors with both proportional (PTAT) and complementary (CTAT) variation coefficients are discussed. Sensitivity, linearity and temperature errors are determined in all cases.