Schottky diode with cutoff frequency of 400 GHz fabricated in 0.18 µm CMOS

Sankaran, Swaminathan

doi:10.1049/el:20050282

Cited by 30 publications

(14 citation statements)

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“…With appropriate device design in terms of size and interface homogeneity, parasitic capacitances and resistances, arising from skin effects and residual native oxide scales at the MS interface, can be minimised to have a significant effect on the RC time constant. In silicon the cut-off frequency has been seen to reach 1 THz obtained by a layer of Ti-Pt-Au on a thin layer of n-Si 161 , whereas 400 GHz has been seen from a simple Ti/n-Si structure 162 . On GaAs, frequencies of up to 5 THz have been achieved, as reviewed by Sizov & Rogalski 163 .…”

Section: A Schottky Barrier Diodesmentioning

confidence: 95%

The rectenna device: From theory to practice (a review)

Donchev

Pang

Gammon

et al. 2014

MRS Energy & Sustainability

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The Rectenna (RECTifying antENNA), which was first demonstrated by William C. Brown in 1964 as a receiver for microwave power transmission, is now increasingly researched as a means of harvesting solar radiation. Tapping into the growing photovoltaic market, the attraction of the rectenna concept is the potential for devices that, in theory, are not limited in efficiency by the Shockley-Queisser limit. In this review, the history and operation of this 40-year old device concept is explored in the context of power transmission and the ever increasing interest in its potential applications at THz frequencies, through the infra-red and visible spectra. Recent modelling approaches that have predicted controversially high efficiency values at these frequencies are critically examined. It is proposed that to unlock any of the promised potential in the solar rectenna concept, there is a need for each constituent part to be improved beyond the current best performance, with the existing nanometer scale antennas, the rectification and the impedance matching solutions all falling short of the necessary efficiencies at THz frequencies. Advances in the fabrication, characterisation and understanding of the antenna and the rectifier are reviewed, and common solar rectenna design approaches are summarised. Finally, the socio-economic impact of success in this field is discussed and future work is proposed.

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Section: A Schottky Barrier Diodesmentioning

confidence: 95%

The rectenna device: From theory to practice (a review)

Donchev

Pang

Gammon

et al. 2014

MRS Energy & Sustainability

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“…Apparently, a Schottky diode is different from a pn junction at two aspects. A Schottky diode has no minority carrier storage effect and thus possesses a much higher frequency response [4] [5]. The current transport mechanism of a Schottky diode is dominant by the thermionic current while the current transport mechanism in a pn junction is dominant by the diffusion current.…”

Section: Silicon Schottky Diode In Foundry Cmos Processmentioning

confidence: 99%

“…Nowadays, a millimeter-wave transceiver is usually demonstrated in the advanced CMOS technologies [1]- [3] and the expensive research and development cost of the advanced CMOS process prevents the 60 GHz transceiver from entering the commercial market. In 2005, K. K. O. et al [4] employed Schottky diodes to implement millimeter wave detectors in the low-cost 0.18 μm CMOS process [5]. A Silicon-based Schottky diode has cut-off frequency of several hundred GHz and thus opens up a new scenario for applying low-cost CMOS process to millimeter-wave applications [6].…”

Section: Introductionmentioning

confidence: 99%

V-band dual-conversion down-converter with low-doped N-well Schottky diode in 0.18 μm CMOS process

Hsiao

Meng

Wei

et al. 2013

2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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In this paper, a V-band dual-conversion down-converter with a silicon-based Schottky diode using low-doped N-well for DC and RF characteristics optimization is demonstrated in standard 0.18 μm CMOS technology. A triple-balanced subharmonic Schottky diode microwave mixer and a double-balanced resistive analog mixer are employed as the first conversion mixer and the second conversion mixer, respectively. As a result, the conversion gain is about -1 dB in the range of 45~64 GHz. The noise figure is about 20 dB, IP 1dB is about -5 dBm and IIP3 is about 5 dBm. The total power consumption is 92.4 mW at 2.5 V supply voltage.

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“…There is no minority carrier storage for a Schottky diode which results in a much higher frequency response [5] [6]. The current transport mechanism of a Schottky diode is dominant by the thermionic current while the current transport mechanism in a pn junction is dominant by the diffusion current.…”

Section: Silicon Schottky Diode In Foundry Cmos Process and High mentioning

confidence: 99%

60-GHz dual-conversion down-/up- converters using Schottky diode in 0.18 μm CMOS process: An alternative approach for millimeter-wave transceiver

Meng

Chang

2012

2012 Asia Pacific Microwave Conference Proceedings

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An alternative approach for 60 GHz transceiver is proposed in this invited paper. The proposed 60 GHz transceiver has GaAs LNA/PA at the front end and the rest of the transceiver is realized in a low-cost foundry CMOS technology with the help of Schottky diode. The 60 GHz transceiver by 65-nm CMOS technology did not show adequate performance and suffers from high R&D cost because of the expensive photo masks while a transceiver based on the GaAs technology is plagued with the high manufacturing cost even though the noise figure of LNA and PAE of PA are good. The recent demonstrated down-/up-converters using Schottky diode in 0.18 μm CMOS process by our group sheds light on this alternative approach for millimeter-wave transceivers.Index Terms -60 GHz, millimeter-wave transceiver, CMOS, silicon Schottky diode, dual conversion, down converter, up converter. II. INTRODUCTIONThe unlicensed 7-GHz bandwidth around 60 GHz for commercial applications such as wireless personal area network (WPAN) and high-definition multimedia interface (HDMI) has opened up for almost two decades. A pure GaAs approach for 60-GHz transceiver was tried at the very beginning but fails because of the high manufacturing cost. In the past decade, 60-GHz transceivers based on CMOS technology [1], [2], [3] were attempted and, recently, a 65-nm CMOS transceiver enters this commercial market. However, there is no evidence yet for the commercial success of the pure CMOS approach because of the high R&D cost. Moreover, the noise figure (NF) of the 65-nm CMOS LNA is around 6 dB while the power added efficiency (PAE) of 65-nm CMOS PA at 1 dB gain compression point is less than 10% as shown in Figure 1. The demonstrated 60-GHz 65-nm CMOS transceiver consumes Watt level power consumption and prevents it from portable wireless applications. It is said that the performance of CMOS improves by the scaling rule. It is not the case for the millimeter-wave transceivers. As shown in Fig. 1, the NF improves because of higher cut-off frequency but PAE degrades because of lower breakdown voltage as the CMOS device scales down. Thus, it is questionable that millimeter-wave transceiver can be improved by the CMOS scaling rule. On the other hand, GaAs technology offers good NF and high PAE for LNA and PA, respectively, as shown in Fig. 1. Moreover, the recently developed silicon Schottky diode has made possible the 60-GHz dual-conversion down-/up-converters in low-cost 0.18-μm foundry CMOS technology [4]. Thus, an alternative approach for the millimeter-wave transceiver by employing external LNA and PA based on III-V compound semiconductor and low-cost standard CMOS process is proposed in Fig. 2 together with two previous approaches. (a) 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 Standard CMOS Technologies III-V Compound Technologies 60-GHz Power Amplifiers HEMT 90 nm CMOS 65 nm CMOS 45 nm CMOS PAE (%) OP1dB (dBm) (b) Fig.1 (a) noise and (b) power performances of CMOS and III-V compound technology in the 60-GHz (see [4] ref.) (a) (b) (c) Fig. 2. Block diagram of differ...

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Schottky diode with cutoff frequency of 400 GHz fabricated in 0.18 µm CMOS

Cited by 30 publications

References 4 publications

The rectenna device: From theory to practice (a review)

The rectenna device: From theory to practice (a review)

V-band dual-conversion down-converter with low-doped N-well Schottky diode in 0.18 μm CMOS process

60-GHz dual-conversion down-/up- converters using Schottky diode in 0.18 μm CMOS process: An alternative approach for millimeter-wave transceiver

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Schottky diode with cutoff frequency of 400 GHz fabricated in 0.18 µm CMOS

Cited by 30 publications

References 4 publications

The rectenna device: From theory to practice (a review)

The rectenna device: From theory to practice (a review)

V-band dual-conversion down-converter with low-doped N-well Schottky diode in 0.18 μm CMOS process

60-GHz dual-conversion down-/up- converters using Schottky diode in 0.18 &#x03BC;m CMOS process: An alternative approach for millimeter-wave transceiver

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60-GHz dual-conversion down-/up- converters using Schottky diode in 0.18 μm CMOS process: An alternative approach for millimeter-wave transceiver