Schottky junctions on perovskite single crystals: light-modulated dielectric constant and self-biased photodetection

Shaikh, Parvez A.; Shi, Dong; Retamal, José Ramón Durán; Sheikh, Arif D.; Haque, Azimul; Kang, Chen‐Fang; He, Jr‐Hau; Bakr, Osman M.; Wu, Tom

doi:10.1039/c6tc02828d

Cited by 146 publications

(93 citation statements)

References 78 publications

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“…As observed from a single cycle of photoresponse curve shown in Figure 3f, the device can operate properly with well distinguished on-and off-states under 520 nm irradiation with a modulation frequency of 12 kHz, indicating a rapid response speed. [25][26][27]48,49] To shed light on the dependence of photoresponse on the incident light intensity, we then recorded normalized spectral response of the device in the wavelength region of 380-900 nm at a fixed light intensity. [51] Significantly, the response speed of our selfdriven photodetector is much faster than CH 3 NH 3 PbI 3 MWs/ NWs-based photodetectors with symmetric contact electrodes and perovskite single-crystal photodetectors with asymmetric contact electrodes in previous reports (see Table 1).…”

Section: Resultsmentioning

confidence: 99%

Asymmetric Contact‐Induced Self‐Driven Perovskite‐Microwire‐Array Photodetectors

Peng

Fang

et al. 2019

Adv Elect Materials

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Combining both 1D geometry and the features of hybrid perovskite materials, perovskite micro/nanowires have recently attracted particular attention for a variety of optoelectronic device applications. Herein, by taking advantage of the strong built‐in potential induced by asymmetric contact with varied work functions, highly sensitive visible photodetectors based on a CH3NH3PbI3 microwire array that display pronounced photovoltaic activities are reported. These photodetectors afford the capability to work without an external power supply. A representative detector with Au/Ag electrodes achieves a reasonable responsivity of 161.1 mA W−1 with a fast response speed of 13.8/16.1 µs under 520 nm illumination at zero bias. In addition, such a device is also characterized by an ultralow dark current of tens of femtoamps, enabling a high specific detectivity of 1.3 × 1012 Jones. Furthermore, a flexible photodetector is successfully prepared, which shows comparable photoresponse performance and outstanding flexibility and bending durability. Given the good device performance and simple device geometry, the present self‐driven photodetectors hold great promise for future highly sensitive and low‐energy‐consumption photodetection systems.

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Section: Resultsmentioning

confidence: 99%

Asymmetric Contact‐Induced Self‐Driven Perovskite‐Microwire‐Array Photodetectors

Peng

Fang

et al. 2019

Adv Elect Materials

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“…For example, a 2 mm‐thick bulk single‐crystal MAPbBr 3 photodetector in an optimized structure (Si/PVK/C 60 /BCP/Au) had a modest responsivity of ≈0.02 A W −1 at a −1 V bias . Another bulk single‐crystal MAPbBr 3 photodetector (Pt/PVK/Au, 150 µm thickness) also displayed a low responsivity (≈2 mA W −1 at a 0 V bias) . In contrast, Ma's group adopted single‐crystal MAPbBr 3 thin films with a thickness of only 380 nm into a vertical‐structure photodetector (ITO/PVK/Au, Figure e), which was also capable of absorbing 98% of the light at 520 or 405 nm .…”

Section: Applications Of Single‐crystal Perovskite Thin Filmsmentioning

confidence: 99%

Recent Advances in Halide Perovskite Single‐Crystal Thin Films: Fabrication Methods and Optoelectronic Applications

et al. 2019

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Metal‐halide perovskites have aroused intense interest in the scientific community by virtue of their numerous remarkable optoelectronic properties, which render them promising candidates for applications in various optoelectronic fields, such as solar cells, light‐emitting diodes, photodetectors, and lasers. Compared with perovskite polycrystalline films and nanocrystals, grain‐boundary‐free single‐crystal perovskites possess lower trap‐state densities, higher carrier mobilities, and longer diffusion lengths, which are supposed to deliver superior optoelectronic performance. However, the thickness (a few millimeters) of typical bulk single‐crystal perovskites are much greater than their carrier diffusion length (e.g., MAPbI3 SC, ≈175 µm), which results in severe charge accumulation and significantly hinders their development. To this end, fabricating single‐crystal thin films is of great importance for further exploring the potential of single‐crystal perovskites in various applications. In this paper, the rapid and prosperous developments in the fabrication methods of perovskite single‐crystal thin films are systematically summarized and recent encouraging progress in their physical and chemical properties as well as the optoelectronic applications (solar cells, photodetectors, and light‐emitting diodes) of single‐crystal thin films are reviewed. Finally, the challenges and a brief outlook for further improving the quality of perovskite single‐crystal thin films and optimizing the device design are highlighted.

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“…[113][114][115][116] SCP Photodetectors owing to their striking optoelectronic properties have more advantages compared to their counterparts, i.e., polycrystalline films, leading to worldwide interest in single-crystal MHP-based photodetectors. 4,[117][118] Photodetectors have been divided into various types of devices based on their layer composition, as illustrated in Fig. 9, including into two-terminal and three-terminal devices referred to as photodiodes, photoconductors, and phototransistors with source, drain and gate electrodes.…”

Section: Photodetector Applicationsmentioning

confidence: 99%

“…134 A self-biased photodetector with an AVC-grown MAPbBr3 single-crystal that utilized Pt-Au electrodes to make a Schottky junction showed a photodetectivity of 1.410 10 Jones at zero bias. 118 A geometry-regulated dynamic-flow reaction system was used to achieve the thinness-controlled perovskite wafers. The large-sized FAPbI3 and MAPbI3 perovskite single-crystal wafers reported the mass production of integrated photodetectors by simple deposition of 300 nm interdigital Au electrodes through a vacuum evaporation method.…”

Section: Photodetector Applicationsmentioning

confidence: 99%

Single Crystals: The Next Big Wave of Perovskite Optoelectronics

Murali

Kolli

Yin

et al. 2019

ACS Materials Lett.

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102

100

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Contemporary advancements in perovskite semiconductors are visibly impacting the progress of light conversion applications. These alluring photo absorbers have gained wide consideration owing to their simple processing and striking optoelectronic properties. Although polycrystalline perovskite thin films exhibit phenomenal performance in energy harvesting devices, they suffer from severe instabilities arising from morphological disorder and surface degradation under ambient conditions. Recent progress in perovskite single-crystals, which in theory should outperform their polycrystalline thin-film counterparts, has been demonstrated to surmount these challenges due to the exceptional optoelectronic properties, such as low trap density, high mobility, low intrinsic carrier concentration and long carrier diffusion length.However, most of the growth approaches used for single-crystal syntheses produce very thick crystals and 2 | P a g e subsequently, the related optoelectronic applications are very limited. Given the potential of perovskite single crystals, to break a new path for perovskite optoelectronic devices relies on understanding sustainable issues arising from interfacial/integration losses and developing passivation strategies to achieve performance parity in open ambient. Therefore, the current review provides a comprehensive overview of the advantages, limitations, and challenges associated with growth methods of single-crystals and their chemical stability, device configurations, photophysics, charge carrier dynamics and photovoltaic applications. TOC GRAPHICSIn recent years, metal halide perovskites (MHP) have captivated the interest of researchers owing to their engrossing properties and phenomenal performances in numerous optoelectronic devices. In the early 1980s, MAPbX3 (MA = CH3NH3, X = Cl¯, Br¯, I¯) and MASnBrxI3-x-based semiconductors were merely considered to be promising for photovoltaics. 1 Nevertheless, their physical and chemical properties have not been meticulously studied. A turning point in the field occurred in 2009 when Miyasaka first reported a thin film-based solar cell with an efficiency of 3.81% and photovoltage of 0.96 V showing external quantum efficiency (EQE) of 65%. 2 Later, many researchers have contributed for the synthesis and device applications of single-crystal perovskite in solar cells and other optoelectronic applications. 3,4 Moreover, 3 | P a g e single-crystal perovskites (SCPs) are a unique class of materials that have been used as solar radiation absorbers. It should be noted that the MAPbX3 (X = Br ─ , I ─ ) perovskite single crystals possess unprecedented long charge carrier diffusion lengths (10 µm) and a striking low trap density (10 9 to 10 10 cm -3 ). 5 More specifically, under 1 sun illumination, the single-crystals of MAPbI3 achieved diffusion lengths of 175 μm and exceeding 3 mm under weak light for both electrons and holes. [6][7] To achieve an efficient device performance, long-range ordered pattern in a perovskite lattice is desirable to significantly...

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Schottky junctions on perovskite single crystals: light-modulated dielectric constant and self-biased photodetection

Abstract: Schottky-junctions formed on hybrid perovskite CH3NH3PbBr3 single crystals show significant light-induced tuning of dielectric constant and self-biased photodetection.

Cited by 146 publications

References 78 publications

Asymmetric Contact‐Induced Self‐Driven Perovskite‐Microwire‐Array Photodetectors

Asymmetric Contact‐Induced Self‐Driven Perovskite‐Microwire‐Array Photodetectors

Recent Advances in Halide Perovskite Single‐Crystal Thin Films: Fabrication Methods and Optoelectronic Applications

Single Crystals: The Next Big Wave of Perovskite Optoelectronics

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