Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage

Gao, Jingnan; Wang, Maojun; Yin, Ruiyuan; Liu, Shaofei; Wen, Cheng P.; Wang, Jinyan; Wu, Weixiong; Hao, Yongqiang; Jin, Yufeng; Shen, Bo

doi:10.1109/led.2017.2737520

Cited by 30 publications

(16 citation statements)

References 18 publications

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“…High-voltage rectifiers are crucial in nearly every topology of power converters, and GaN-on-Si Schottky barrier diodes (SBDs) are highly promising for such applications due to their superior performance and competitive cost. [1][2][3][4][5][6][7][8] Moreover, they are lateral devices and can be monolithically integrated with GaN-on-Si transistors and circuits, which is highly desirable for future compact and efficient power converters. 9,10 Despite these advantages, a major obstacle for GaN-on-Si SBDs is their limited voltage-blocking performance.…”

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confidence: 99%

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Matioli

2018

Applied Physics Letters

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This letter reports lateral GaN-on-Si power Schottky barrier diodes (SBDs) with unprecedented voltage-blocking performance by integrating 3-dimensionally a hybrid of tri-anode and slanted trigate architectures in their anode. The hybrid tri-anode pins the voltage drop at the Schottky junction (V SCH), despite a large applied reverse bias, fixing the reverse leakage current (I R) of the SBD. Such architecture led to an ultra-low I R of 51 6 5.9 nA/mm at À1000 V, in addition to a small turnon voltage (V ON) of 0.61 6 0.03 V. The slanted tri-gate effectively distributes the electric field in OFF state, leading to a remarkably high breakdown voltage (V BR) of À2000 V at 1 lA/mm, constituting a significant breakthrough from existing technologies. The approach pursued in this work reduces the I R and increases the V BR without sacrificing the V ON , which provides a technology for high-voltage SBDs, and unveils the unique advantage of tri-gates for advanced power applications.

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confidence: 99%

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Matioli

2018

Applied Physics Letters

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“…By now, numerous approaches like the etching barrier layer [13] and selective Si diffusion [14] have been demonstrated to effectively reduce the onset voltage, but the leakage current is relatively large. In addition, combinations of high/low Schottky barrier metals [15], carbon-doped GaN buffer [16,17], Fe-doped GaN buffer [18], and gated edge termination (GET) [19,20] have been proposed to suppress the reverse leakage, but the double Schottky barrier metal and GET are still a challenging manufacturing issue, and the doped GaN buffer will affect the device’s forward characteristics, especially the on-resistance. The utilization of field plates (FPs), such as anode FPs (AFP) [21] and cathode FPs (CFP), is a simple and effective method to modulate the electric field.…”

Section: Introductionmentioning

confidence: 99%

“…Meanwhile, the electrons in the bottom buffer layer can effectively modulate the device’s surface electric field. In addition, the GET is integrated into the Schottky contact (SC) serving as the anode [19,20] to reduce the turn-on voltage. The AFP along with the CFP are located separately at the anode and cathode, which can modulate the electric field distribution in the anode–cathode region, which in turn results in an appreciable V BK improvement.…”

Section: Introductionmentioning

confidence: 99%

A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer

et al. 2019

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In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conventional AlGaN/GaN SBD with gated edge termination (GET SBD) were simulated and compared using a Technology Computer Aided Design (TCAD) tool. The results proved that the breakdown voltage (VBK) in the proposed structure was tremendously improved when compared to the GET SBD. This enhancement is attributed to the suppression of the anode tunneling current by the T-anode and the redistribution of the electric field in the anode–cathode region induced by the field plates (FPs). Moreover, the T-anode had a negligible effect on the two-dimensional electron gas (2DEG) in the channel layer, so there is no deterioration in the forward characteristics. After being optimized, the proposed structure exhibited a low turn-on voltage (VT) of 0.53 V and a specific on-resistance (RON,sp) of 0.32 mΩ·cm2, which was similar to the GET SBD. Meanwhile, the TAI-BBF FP SBD with an anode-cathode spacing of 5 μm achieved a VBK of 1252 V, which was enhanced almost six times compared to the GET SBD with a VBK of 213 V.

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“…researchers have recently proposed low VON along with low IR and high VBV technologies, including recessed anode, dual-filed plates, regrowth cathodes, and dual-channel field-effect rectifier (LFER) [4] [5] [6]. However, these approaches require accurate control of anode etching to the 2DEG and a complicated fabrication process, which incorporates reliability issues and extra processing cost.…”

Section: Introductionmentioning

confidence: 99%

Multi-Channel AlGaN/GaN Lateral Schottky Barrier Diodes on Low-Resistivity Silicon for Sub-THz Integrated Circuits Applications

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et al. 2019

IEEE Electron Device Lett.

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Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage

Cited by 30 publications

References 18 publications

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer

Multi-Channel AlGaN/GaN Lateral Schottky Barrier Diodes on Low-Resistivity Silicon for Sub-THz Integrated Circuits Applications

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