M etal-semiconductor (MS) or Schottky structures, which form the basis of semiconductor base circuit elements, formed by the tight contact of metal and semiconductors instead of a semiconductor-semiconductor junction as in typical diodes constructed by p-type and n-type semiconductors (PN junction) in contact. In metal-semiconductor structures, typically used metals are gold (Au), silver (Ag), platinum (Pt), tungsten (W), aluminium (Al) and molybdenum (Mo) and semiconductors are gallium arsenide (GaAs), zinc selenide (ZnSe), cadmium telluride (CdTe) besides mostly used Silicon (Si). These structures can respond quickly to the transitions between conductivity and insulator states at high frequencies and become widespread in production and use in the semiconductor industry due to their significant advantages. The voltage drops across PN and Schottky junctions are approximately between 0.6