Scintillation Properties of In Doped ZnO With Different In Concentrations

Abstract

Using the liquid phase epitaxy (LPE) method we prepared the high crystalline quality In 3+ doped ZnO thin film scintillators with different Indium concentration of 26, 53, and 141 ppm. We evaluated their optical properties and radiation response, because there are few reports of radiation response of In-doped ZnO scintillator. In order to imitate the scintillator application, we measured the alpha-ray excited luminescence spectra. The emission bands peaking around 375 and 500 nm were observed, and with an increment of In 3+ , the intensity of both bands decreases. In the measurement of light yield, we optically coupled the sample with PMT R7600 by a silicone grease, and excitation was provided by 241 Am 5.5 MeV -rays. The samples showed of about 10% of the light yield of BGO scintillator which was used as a reference. Under the same excitation the scintillation decay was measured in all the samples as well.

Optical and luminescence properties of zinc oxide (Review)

“…Commonly, ZnO:Ga is used in the form of powderlike [44] or thin-film [45] coatings. The authors of [44] examined the spectral and kinetic characteristics of ZnO:Ga powders of different origins and particle sizes.…”

“…Thin-film ZnO:In samples were studied upon excitation by α-particles [45]. With increasing In content, the intensity of the visible (~500 nm, 2.48 eV) luminescence decreased, and, for the edge luminescence at ~375 nm (3.31 eV), an optimal content of In was 26 ppm.…”

Evaluation of Scintillation Properties of GaN

“…As clearly seen in the figure, most part of scintillation in ZnO was slow emission. In ZnO based scintillators, slow µs component due to oxygen vacancy at visible wavelength [27] sometimes causes a degradation of timing resolution of detectors. It is an advantage of GaN that does not have any slower decay component when compared with the other famous semiconductor scintillator ZnO.…”

Structural and optical properties of indium-doped highly conductive ZnO bulk crystals grown by the hydrothermal technique

“…As TCOs, ZnO-based materials, especially indium, gallium and aluminum (Group III)-doped ZnO crystals have demonstrated some advantages over other materials [1][2]. In addition, group-III doped ZnO also has many other applications, for example, as alphaparticle fast scintillators and as plasmonic materials [3].…”