2006 IEEE Nuclear Science Symposium Conference Record 2006
DOI: 10.1109/nssmic.2006.354191
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Scintillation Properties of SrHfO/sub 3/:Ce/sup 3+/ and BaHfO/sub 3/:Ce/sup 3+/ Ceramics

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“…Hf- or Ta-based materials have potential as novel scintillation materials with no intrinsic background noise, high density, and high effective atomic number, and some groups including us reported the Ce-doped SrHfO 3 group to have a fast decay time of approximately 42 ns, high density of 7.65 g/cm 3 , and high effective atomic number. Although Hf- or Ta-based materials are attractive ones for the PET application, the single-crystal growth of Hf- or Ta-based crystals is hard by the conventional melt growth techniques such as the micropulling down (μ-PD) method and Czochralski method , due to the higher melting point (mp) compared to the softening or melting point of the crucibles. Here, Ir is often used as a crucible, and its melting point is about 2466 °C.…”
Section: Introductionmentioning
confidence: 99%
“…Hf- or Ta-based materials have potential as novel scintillation materials with no intrinsic background noise, high density, and high effective atomic number, and some groups including us reported the Ce-doped SrHfO 3 group to have a fast decay time of approximately 42 ns, high density of 7.65 g/cm 3 , and high effective atomic number. Although Hf- or Ta-based materials are attractive ones for the PET application, the single-crystal growth of Hf- or Ta-based crystals is hard by the conventional melt growth techniques such as the micropulling down (μ-PD) method and Czochralski method , due to the higher melting point (mp) compared to the softening or melting point of the crucibles. Here, Ir is often used as a crucible, and its melting point is about 2466 °C.…”
Section: Introductionmentioning
confidence: 99%