Abstract:In this paper the 2DEG characteristics study of InAlAs/InP based high electron mobility transistor (HEMT) structures with two different channel materials (InAlAs and InGaAs) are presented through self‐consistent solutions of Schrodinger and Poisson equations which results in energy bands, sheet charge density, electric field, sheet resistance and CV charactristics. The 2DEG (two dimensional electron gas) is created at the heterointerface of InAlAs/In(Al,Ga)As due to conduction energy band discontinuity. The 2D… Show more
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