2021
DOI: 10.1002/jnm.2869
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DC and transient models of the MSET device

Abstract: As a multigate device, the multiple‐state electrostatically formed nanowire transistor (MSET) exhibits a rather complex characteristic on account of the coupling between each of its two adjacent terminals. The MSET has shown promise across a steadily growing range of applications and integrated circuit components. However, an analytical model of the MSET has not been formulated. The objective of this work was to develop practical DC and transient models of the MSET. The modeling approach comprises two stages: … Show more

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“…Simulations not only make it possible to find the appropriate circuit parameters faster but also save labor and production costs in the physical manufacturing process [ 3 ]. Therefore, highly accurate and efficient microwave device models play a very important role in circuit design simulation [ 4 , 5 , 6 , 7 ]. Improving device modeling accuracy and shortening device design cycle have become major fields of research in microwave devices [ 8 , 9 ].…”
Section: Introductionmentioning
confidence: 99%
“…Simulations not only make it possible to find the appropriate circuit parameters faster but also save labor and production costs in the physical manufacturing process [ 3 ]. Therefore, highly accurate and efficient microwave device models play a very important role in circuit design simulation [ 4 , 5 , 6 , 7 ]. Improving device modeling accuracy and shortening device design cycle have become major fields of research in microwave devices [ 8 , 9 ].…”
Section: Introductionmentioning
confidence: 99%