The widespread realization of wearable electronics requires
printable
active materials capable of operating at low voltages. Polymerized
ionic liquid (PIL) block copolymers exhibit a thickness-independent
double-layer capacitance that makes them a promising gating medium
for the development of organic thin-film transistors (OTFTs) with
low operating voltages and high switching speed. PIL block copolymer
structure and self-assembly can influence ion conductivity and the
resulting OTFT performance. In an OTFT, self-assembly of the PIL gate
on the semiconducting polymer may differ from bulk self-assembly,
which would directly influence electrical double-layer formation.
To this end, we used poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (P(NDI2OD-T2))
as a model semiconductor for our OTFTs, on which our PILs exhibited
self-assembly. In this study, we explore this critical interface by
grazing-incidence small-angle X-ray scattering (GISAXS) and atomic
force microscopy (AFM) of P(NDI2OD-T2) and a series of poly(styrene)-b-poly(1-(4-vinylbenzyl)-3-butylimidazolium-random-poly(ethylene
glycol) methyl ether methacrylate) (poly(S)-b-poly(VBBI+[X]-r-PEGMA)) block copolymers with varying PEGMA/VBBI+ ratios and three different mobile anions (where X = TFSI–, PF6
–, or BF4
–). We investigate the thin-film self-assembly
of block copolymers as a function of device performance. Overall,
a mixed orientation at the interface leads to improved device performance,
while predominantly hexagonal packing leads to nonfunctional devices,
regardless of the anion present. These PIL gated OTFTs were characterized
with a threshold voltage below 1 V, making understanding of their
structure–property relationships crucial to enabling the further
development of high-performance gating materials.