SCREAM MicroElectroMechanical Systems

MacDonald, N.C.

doi:10.1016/0167-9317(96)00007-x

Cited by 94 publications

(40 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…As indústrias nas áreas de microeletrônica e biomédica foram as primeiras a investir na concepção e implementação de diferentes tipos de sensores MEMS. Em 1992, a Universidade de Cornell estabeleceu o processo SCREAM (Single Crystal Reactive Etch and Metallization) que foi o primeiro processo desenvolvido especificamente para fabricação de dispositivos MEMS [26].…”

Section: Tecnologia Memsunclassified

Carbeto de Silício como Material Base para Sensores MEMS de Uso Aeroespacial: Uma Visão Geral

et al. 2014

View full text Add to dashboard Cite

RESUMOEste artigo discute o emprego do carbeto de silício (SiC), na forma de substrato e filme fino, em sensores MEMS (MicroElectro-Mechanical Systems) para aplicações em ambientes sujeitos a condições extremas, especialmente no setor aeroespacial. As propriedades físicas e químicas do SiC que o tornam um material adequado para dispositivos eletrônicos e sensores são descritas. Os conceitos, evolução e aplicações da tecnologia MEMS são apresentados. Uma visão geral sobre o estágio atual de desenvolvimento de sensores MEMS baseados em SiC e uma análise das pesquisas realizadas nesta área no exterior e no Brasil, tanto nas universidades quanto nas indústrias, são também apresentad as. Os recentes avanços alcançados, as dificuldades encontradas e o impacto dessas pesquisas são discutidos, bem como as perspectivas para um futuro próximo.Palavras-chave: carbeto de silício, materiais semicondutores, micro-sensores, aplicações aeroespaciais. ABSTRACTThis paper discusses the use of silicon carbide (SiC), in bulk and thin-film form, in MEMS (Micro-Electro-Mechanical Systems) sensors for extreme environment applications, especially in aerospace. The physical and chemical properties of SiC that make it a suitable material for electronic devices and sensors are described. Concepts, developments and applications of MEMS technology are presented. An overview of the current stage of development of SiC-based MEMS sensors and an analysis of research conducted in this area in Brazil and abroad, both in universities and industries are also presented. The recent progress made, difficulties encountered and the impact of these investigations are discussed as well as the outlook for the near future.

show abstract

Section: Tecnologia Memsunclassified

Carbeto de Silício como Material Base para Sensores MEMS de Uso Aeroespacial: Uma Visão Geral

et al. 2014

View full text Add to dashboard Cite

show abstract

“…Low-temperature deposited polycrystalline germanium [5] or silicon-germanium alloy [6] has also been proposed for post-CMOS integration, but they are not readily available in a conventional CMOS fabrication flow. In SCREAM [7], the mechanical structure is released by removing the underlying bulk silicon using an isotropic dry etch. Besides added process complexity, the lateral extension of the release-etch also limits the device packing density.…”

Section: Introductionmentioning

confidence: 99%

A Self-Scanned Active-Matrix Tactile Sensor Realized Using Silicon-Migration Technology

Zeng

Wong

2015

J. Microelectromech. Syst.

View full text Add to dashboard Cite

A process based on the silicon-migration technology for the monolithic integration of micromechanical devices and complementary metal-oxide-semiconductor (CMOS) circuits is described. A cavity sealed with a silicon cover-diaphragm is first formed without the need of a sacrificial layer etch. The transistors are next fabricated. The issues of material and process incompatibility inherently present in many schemes of microsystem integration are largely avoided using this technique. The technology was demonstrated with the design, fabrication, and characterization of a 16 × 16 active-matrix tactile sensor integrated with a 16-stage CMOS ring counter for row scanning.[2014-0082] Index Terms-Silicon-migration technology (SiMiT), MEMS-CMOS integration, tactile sensor.Fan Zeng received the B.Eng. degree from the

show abstract

“…In order to release suspended micromechanical silicon structures, many techniques have been developed [1] . The SCREAM (single crystal reactive etching and metallization) process is one of these techniques [2,3], which utilizes a layer of deposited thin film as the passivation layer on trench's sidewalls, and combines anisotropic with isotropic reactive ion etching (RIE) to release the suspended structures.…”

Section: Introductionmentioning

confidence: 99%

Parylene film for sidewall passivation in SCREAM process

Huang

et al. 2008

Sci. China Ser. E-Technol. Sci.

View full text Add to dashboard Cite

Trench sidewall passivation is a key step in the SCREAM (single crystal reactive etching and metallization) process for releasing suspended MEMS structures. In this paper, the parylene thin film is reported to serve as the passivation layer owing to its excellent conformality, chemical inertness, mechanical performance, and especially, low growth temperature. The deposited parylene films are characterized and the test structures are released through SCREAM process utilizing the parylene films as a passivation layer. The results show that as a passivation layer the parylene has more merits than the PECVD SiO 2 film.parylene, sidewall passivation, stress, conformality, SCREAM (single crystal reactive etching and metallization) process

show abstract

SCREAM MicroElectroMechanical Systems

Cited by 94 publications

References 35 publications

Carbeto de Silício como Material Base para Sensores MEMS de Uso Aeroespacial: Uma Visão Geral

Carbeto de Silício como Material Base para Sensores MEMS de Uso Aeroespacial: Uma Visão Geral

A Self-Scanned Active-Matrix Tactile Sensor Realized Using Silicon-Migration Technology

Parylene film for sidewall passivation in SCREAM process

Contact Info

Product

Resources

About