2010
DOI: 10.1103/physrevb.82.195117
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Search for ferromagnetism in doped semiconductors in the absence of transition metal ions

Abstract: In contrast to semiconductors doped with transition metal magnetic elements (e.g. Ga1−xMnxAs), which become ferromagnetic at temperatures below ∼ 10 2 K, semiconductors doped with nonmagnetic ions (e.g. silicon doped with phosphorous) have not shown evidence of ferromagnetism down to millikelvin temperatures. This is despite the fact that for low densities the system is expected to be well modeled by the Hubbard model, which is predicted to have a ferromagnetic ground state at T = 0 on 2-or 3-dimensional bipar… Show more

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Cited by 6 publications
(1 citation statement)
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References 109 publications
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“…There are threshold carrier densities and Hubbard U parameters, which are necessary for ferromagnetism in simple, ordered lattices. Nielsen and Bhatt 53 have considered a similar model to ours for ferromagnetism in finite systems without transition-metal ions. They used a Hubbard model on finite lattices and disordered clusters in which the hopping parameter depended on the occupancies of both sites involved in a hop and on the site separation.…”
Section: Hubbard Modelmentioning
confidence: 99%
“…There are threshold carrier densities and Hubbard U parameters, which are necessary for ferromagnetism in simple, ordered lattices. Nielsen and Bhatt 53 have considered a similar model to ours for ferromagnetism in finite systems without transition-metal ions. They used a Hubbard model on finite lattices and disordered clusters in which the hopping parameter depended on the occupancies of both sites involved in a hop and on the site separation.…”
Section: Hubbard Modelmentioning
confidence: 99%