Second breakdown and current distributions in transistors

Schafft, H.A.; French, J.C.

doi:10.1016/0038-1101(66)90095-5

Cited by 11 publications

(3 citation statements)

References 1 publication

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“…Second breakdown in SOS diodes under reverse bias has been explained as an electrothermal phenomenon involving current filamentation ( 6,7,10). For diodes having a p+ -n -n+ structure , the regions of most concern in second breakdown are , for reverse bias , the p+ -n junction and the n region and , for forward bias , the n region alone .…”

Section: A Simplfied Computer Model For Current Filamentation Inmentioning

confidence: 99%

Second Breakdown Susceptibility of Silicon-on-Sapphire Diodes.

Budenstein¹,

Baruah²,

Knight³

1978

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Section: A Simplfied Computer Model For Current Filamentation Inmentioning

confidence: 99%

Second Breakdown Susceptibility of Silicon-on-Sapphire Diodes.

Budenstein¹,

Baruah²,

Knight³

1978

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“…Observations of the current distributions in transistors under various conditions of operation were made with the use of temperature-sensitive phosphors. 16 The temperature of the device will increase in areas of high current density. The current constriction associated with second breakdown was demonstrated by these experiments.…”

Section: Second Breakdownmentioning

confidence: 99%

Measurement methods for the semiconductor device industry :

Bullis¹

1969

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“…Local hot spots can then be identified. These may be caused by defects in the bond between the chip and header, current hogging or secondary breakdown (Hamiter 1967, Schafft and French 1966, Agatsuma 1966.…”

Section: Introductionmentioning

confidence: 99%

Observation of carrier densities in silicon devices by infrared emission

White

Smith

1977

J. Phys. E: Sci. Instrum.

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Previous publications have shown that the absorption coefficient of silicon in the near infrared depends on the carrier concentration of the material considered. Consequently, determination of the absorption coefficient enables the carrier concentration to be deduced. Unfortunately the absorption is generally small for the doping levels used in integrated circuits, and therefore normal absorption methods require thick samples for accurate measurements. For measuring material with low absorption, an emissivity method is better. Such a technique is presented which enables carrier concentrations in standard integrated circuit diffusions to be evaluated with a spatial resolution approaching 20 pm. The samples are heated to approximately 373 K so that there is a net emission of thermal radiation, the amount emitted depending on the carrier concentration. A review of the main factors involved in the emission is presented, together with experimental verification on standard bipolar diffusions. The basic technique is applicable in most cases where observation of carrier distribution is required.

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Second breakdown and current distributions in transistors

Cited by 11 publications

References 1 publication

Second Breakdown Susceptibility of Silicon-on-Sapphire Diodes.

Second Breakdown Susceptibility of Silicon-on-Sapphire Diodes.

Measurement methods for the semiconductor device industry :

Observation of carrier densities in silicon devices by infrared emission

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